Optoelectronic synaptic devices are of great scientific and practical importance because of various potential applications such as ocular simulating and optical−electrical managers based on a new optoelectronic coupling mechanism. In this work, we design a novel channel layer with p-type CsPbBr 3 nanoparticles (NPs) buried in an InGaZnO (IGZO) film to construct the corresponding thin-film transistors (TFTs), which exhibits intense improvement in visible-light photosensitivity and synaptic plasticity as compared to the pure IGZO counterpart. Specifically, the composite device is able to exhibit versatile synaptic behavior under light stimuli with density as low as 0.12 μW/cm 2 and with the gain 5−20 times higher than that of the IGZO TFT in the visible-light region. Based on the band alignment between the IGZO and NPs, the excitation and decay processes of intrinsic and photoinduced carriers are discussed. Moreover, owing to the gate bias control in a threeterminal configuration, our TFT synapses can imitate complex biological behaviors including the famous "Pavlov's dog" experiment and the "reward and punishment mechanism" of the brain via editing the gate voltage/light pulse stimuli.

Disease-associated variants in the human genome are continually being identified using DNA sequencing technologies that are especially effective for Mendelian disorders. Here we sequenced whole genome to high coverage (>30×) of 6 members of a 7-generation family with dwarfism from a consanguineous tribe in Pakistan to determine the causal variant(s). We identified a missense variant rs111033552 (c.2011T>C [p.Ser671Pro]) located in COL10A1 (encodes the alpha chain of type X collagen) as the most likely contributor to the dwarfism. We further confirmed the variant in 22 family members using Sanger sequencing. All affected individuals are heterozygous for the missense mutation rs111033552 and no individual homozygous was observed. Moreover, the mutation was absent in 69,985 individuals representing >150 global populations. Taking advantage of whole-genome sequencing data, we also examined other variant forms, including copy number variation and insertion/deletion, but failed to identify such variants enriched in the affected individuals. Thus rs111033552 had priority for linkage with dwarfism.

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We report the fabrication of amorphous zinc tin oxide (ZTO) thin films using rf magnetron sputtering and rapid postannealing. A vertically graded composition alloy (Zn 1−x Sn x O) is constructed in a single amorphous layer, which exhibits strong visible light absorption. The ultrafast carrier dynamics of the ternary zinc tin oxide film is investigated by femtosecond transient absorption (TA) spectroscopy, which shows that the photocarriers in ZTO films have nearly identical relaxation dynamics under an ultraviolet or visible pump, indicating that the visible light absorption is induced by band gap reduction rather than defect state in the ZTO film. Our results provide insights into understanding the photophysical mechanism of amorphous ZTO films and suggest that this gradient film is a promising candidate for solar cell and photodetector devices.

Background: As a key component in artificial intelligence computing, a transistor design is updated here as a potential alternative candidate for artificial synaptic behavior implementation. However, further updates are needed to better control artificial synaptic behavior. Here, an updated channel-electrode transistor design is proposed as an artificial synapse device; this structure is different from previously published designs by other groups. Methods: A semiconductor characterization system was used in order to simulate the artificial synaptic behavior and a scanning electron microscope was used to characterize the device structure. Results: It was found that the electrode added to the transistor channel had a strong impact on the representative transmission behavior of such artificial synaptic devices, such as excitatory postsynaptic current (EPSC) and the paired-pulse facilitation (PPF) index. Conclusion: These behaviors were tuned effectively and the impact of the channel electrode is explained by the combined effects of the joint channel electrode and conventional gate. The voltage dependence of such oxide devices suggests more capability to emulate various synaptic behaviors for numerous medical and non-medical applications. This is extremely helpful for future neuromorphic computational system implementation.

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Our data are complementary to public data sources, and the CNV map may facilitate in the identification of pathogenic CNVs and further biomedical research studies involving the Han Chinese population.