Ultrafast Carrier Dynamics of Amorphous Zinc Tin Oxide Graded Thin Films

Li, Zhongguo; Wu, Zhendong; Wang, Xiaolong; Cao, Hongtao; Liang, Lingyan; Yang, Junyi; Song, Yinglin

doi:10.1021/acs.jpcc.0c10511

Cited by 7 publications

(8 citation statements)

References 43 publications

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“…The fast and slow decay components could be attributed to the defect trapping and inter-band carrier recombination in β-GaS thin films, respectively. These results are analogous to that reported for other semiconductor materials (Fang et al, 2016;Li et al, 2017;Kong et al, 2018;Yan et al, 2020;Li et al, 2021).…”

Section: Femtosecond Ta Resultssupporting

confidence: 90%

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Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Chen

Yang

et al. 2021

Front. Mater.

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Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532 nm while nonlinear absorption appears under 650 nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10–8 m/W and 4.9 × 10–8 m/W at 532 and 650 nm, respectively. The carrier dynamics of β-GaS films was studied via femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices.

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Section: Femtosecond Ta Resultssupporting

confidence: 90%

“…The time resolution of the TA measurement system was ∼280 fs. Details of our TA measurement can be found in the previous report (Li et al, 2021).…”

Section: Femtosecond Ta Measurementmentioning

confidence: 99%

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Chen

Yang

et al. 2021

Front. Mater.

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“…Details of our TA measurement can be found in a previous report. 23 The TA data also show that the strong PIA signal quickly vanish after one picosecond after zero delay time. The large width and fast decay of PIA signal agree with previous studies on the ND-TPA effect in semiconductors.…”

Section: Methodsmentioning

confidence: 83%

Ultrafast optical limiting based on non-degenerate two-photon absorption in Ga2O3 single crystal

et al. 2022

Thirteenth International Conference on Information Optics and Photonics (CIOP 2022)

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Optical limiting (OL) materials are of great importance for protecting optoelectronic sensors and human eyes from high power laser illumination. Despite extensive efforts on various OL materials (organic molecules, metal clusters, low dimensional semiconductors, etc.), however, a candidate OL material with ultrafast response speed, broad laser protection window and large transmission modulation remains elusive. Gallium oxide (β-Ga2O3) is one of the third generation wide-band gap semiconductors. Due to its large band gap (~4.8 eV), high breakdown field strength, low preparation cost and compatibility with other III-N semiconductors, Ga2O3 has huge potential for high-power and lowloss photonic devices. In this study, we investigated the ultrafast optical limiting response in β-Ga2O3 (100) single crystal by using the femtosecond pump-probe technique. Using a 355 nm femtosecond laser pulse as the modulation source, ultrafast broadband transmission modulation was achieved across the white-light continuum probe spectrum (450-750 nm) via the non-degenerate two-photon absorption in Ga2O3. Furthermore, a slow Drude free-carrier plasma effect was observed <5 ps after pump excitation, which is related to the non-degenerate two-photon absorption induced carrier absorption. Our results indicate that Ga2O3 is a promising material platform for broadband optical limiting and highspeed all-optical signal processing.

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“…The time resolution of the TA measurement system was ∼280 fs. The experimental setup of femtosecond TA system is detailed further elsewhere …”

Section: Methodsmentioning

confidence: 99%

“…For instance, previous studies show that the ternary CuSnI films exhibit excellent hole mobility and improved performances compared to pristine CuI films. − A detailed understanding of the carrier dynamics in semiconductors is crucial for both fundamental development and device engineering. In the past decade, considerable efforts have been devoted to revealing the carrier dynamics in semiconductors via time-resolved spectroscopies. − Samu et al found that the recombination of excitons in CuI films is strongly dependent on the applied electrochemical bias, which is related to the populating/depopulating of trap states within the bandgap . Thus, doping of CuI with appropriate dopants should lead to drastic improvements in carrier mobilities and lifetimes.…”

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confidence: 99%

Improved Ultrafast Carrier Relaxation and Charge Transfer Dynamics in CuI Films and Their Heterojunctions via Sn Doping

Cao

et al. 2022

J. Phys. Chem. Lett.

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CuI is one of the promising hole transport materials for perovskite solar cells. However, its tendency to form defects is currently limiting its use for device applications. Here, we report the successful improvement of CuI through Sn doping and the direct measurement of the carrier relaxation and interfacial charge-transfer processes in Sn-doped CuI films and their heterostructures. Femtosecond-transient absorption (fs-TA) measurements reveal that Sn doping effectively passivates the trap states within the bandgap of CuI. The I–V characteristics of heterostructures demonstrate drastic improvement in transport characteristics upon Sn doping. Fs-TA measurements further confirm that the CuSnI/ZnO heterojunction has a type-II configuration with ultrafast charge transfer (<280 fs). The charge transfer time of a CuI/ZnO heterostructure is ∼2.8 times slower than that of the CuSnI/ZnO heterostructure, indicating that Sn doping suppresses the interfacial states that retard the charge transfer. These results elucidate the effect of Sn doping on the performance of CuI-based heterostructures.

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Ultrafast Carrier Dynamics of Amorphous Zinc Tin Oxide Graded Thin Films

Cited by 7 publications

References 43 publications

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Ultrafast optical limiting based on non-degenerate two-photon absorption in Ga2O3 single crystal

Improved Ultrafast Carrier Relaxation and Charge Transfer Dynamics in CuI Films and Their Heterojunctions via Sn Doping

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