Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability

Zhang, Hengbo; Liang, Lingyan; Wang, Xiaolong; Wu, Zhendong; Cao, Hongtao

doi:10.1109/ted.2021.3126278

Cited by 19 publications

(10 citation statements)

References 33 publications

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“…also reveals that the contents of V O between InSnZnO and Pr‐doped InSnZnO show few differences, but the differences in photostability are significant. [ 15 ]…”

Section: Resultsmentioning

confidence: 99%

“…[11] And recent work reported by Liang and Cao et al also reveals that the contents of V O between InSnZnO and Pr-doped InSnZnO show few differences, but the differences in photostability are significant. [15] To investigate the effect of Tb doping on the NBIS stability, the valance states of the Tb in the Tb:In 2 O 3 should be identified. Figure S3, Supporting Information, shows the Tb 3d spectra of the 5 wt.% Tb 4 O 7 doping In 2 O 3 film.…”

Section: Resultsmentioning

confidence: 99%

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The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin‐Film Transistors

Lan

Ding

et al. 2022

Adv Elect Materials

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The development of the next‐generation display technologies requires thin‐film transistors (TFTs) with high mobility and good negative‐bias‐illumination stress (NBIS) stability. Here, a tetravalent‐terbium‐doped indium oxide (Tb:In2O3) semiconductor is reported, which can effectively improve the NBIS stability of the TFT while ensuring high mobility. The TFT with Tb:In2O3 channel layer exhibited remarkable performance with a saturation mobility of 45.0 cm2 V–1 s–1 (with average mobility of 38.6 cm2 V–1 s–1), a turn‐on voltage (Von) of −1.1 V, and an on‐off current ratio of 108. In addition, the Tb:In2O3 TFT showed greatly improved NBIS stability with Von shift (ΔVon) of −3.9 V (with average ΔVon of 4.0 V) under 3600 s stress with −20 V gate voltage and white light illumination (compared to ΔVon of −11.7 V for the pure In2O3 TFT). Comprehensive studies reveal that the effective improvement of NBIS stability after Tb4+ doping is mainly attributed to the wide‐band absorption of the incident blue light by the Tb4f 7—O2p6 to Tb4f 8—O2p5 charge transfer (CT) transition that has smaller overall lattice expansion/contraction and shorter relaxation time compared to VO ionization.

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“…also reveals that the contents of V O between InSnZnO and Pr‐doped InSnZnO show few differences, but the differences in photostability are significant. [ 15 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin‐Film Transistors

Lan

Ding

et al. 2022

Adv Elect Materials

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“…Although the lanthanide doping can reduce the V O concentration and suppress the free carrier generation of the In 2 O 3 , the V O concentration is still much higher than that of the IGZO. Here, the large improvement of NBIS stability after Pr/Tb doping is not mainly due to the reduction of the V O concentration, because there are no direct relationships between the NBIS stability and the V O concentration [ 13 , 17 , 18 ]. For example, the Pr:In 2 O 3 had much higher V O concentration than Tb:In 2 O 3 (see Figure 4 ) for annealing temperature of 300 ℃, but it did not exhibit much difference in NBIS stability compared with Tb:In 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

Lan

Ding

et al. 2022

Nanomaterials

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The applications of thin-film transistors (TFTs) based on oxide semiconductors are limited due to instability under negative bias illumination stress (NBIS). Here, we report TFTs based on solution-processed In2O3 semiconductors doped with Pr4+ or Tb4+, which can effectively improve the NBIS stability. The differences between the Pr4+-doped In2O3 (Pr:In2O3) and Tb4+-doped In2O3 (Tb:In2O3) are investigated in detail. The undoped In2O3 TFTs with different annealing temperatures exhibit poor NBIS stability with serious turn-on voltage shift (ΔVon). After doping with Pr4+/Tb4+, the TFTs show greatly improved NBIS stability. As the annealing temperature increases, the Pr:In2O3 TFTs have poorer NBIS stability (ΔVon are −3.2, −4.8, and −4.8 V for annealing temperature of 300, 350, and 400 °C, respectively), while the Tb:In2O3 TFTs have better NBIS stability (ΔVon are −3.6, −3.6, and −1.2 V for annealing temperature of 300, 350, and 400 ℃, respectively). Further studies reveal that the improvement of the NBIS stability of the Pr4+/Tb4+:In2O3 TFTs is attributed to the absorption of the illuminated light by the Pr/Tb4f n—O2p6 to Pr/Tb 4f n+1—O2p5 charge transfer (CT) transition and downconversion of the light to nonradiative transition with a relatively short relaxation time compared to the ionization process of the oxygen vacancies. The higher NBIS stability of Tb:In2O3 TFTs compared to Pr:In2O3 TFTs is ascribed to the smaller ion radius of Tb4+ and the lower energy level of Tb 4f 7 with a isotropic half-full configuration compared to that of Pr 4f 1, which would make it easier for the Tb4+ to absorb the visible light than the Pr4+.

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“…InSnZnO (ITZO) has great potential for use in transparent or flexible electronics application. , The orbitals of Sn 5s and In 5s in ITZO show large overlapping parts, the synergic intercalation between which widens the electron transmission channel and improves the intrinsic mobility compared with IGZO (InGaZnO). , Moreover, Sn-rich oxides have strong corrosion resistance to common acids and bases, which is promising for back-channel-etch (BCE) devices . Compared with the etch-stop-layer (ESL) ones, it can reduce at least one lithography process, simplify the process steps, and reduce the preparation cost .…”

Section: Introductionmentioning

confidence: 99%

“…Compared with the etch-stop-layer (ESL) ones, it can reduce at least one lithography process, simplify the process steps, and reduce the preparation cost . However, reported ITZO TFTs commonly adopted ITO S/D electrodes (rather than the metal Mo-based process frequently used in the IGZO-TFT production line) or a lift-off electrode process or ESL configuration. ,,, This implies that the S/D process has a big impact on the device performance of ITZO TFTs. There had been a few reports on the influence of electrode/semiconductor contact resistance on their μ FE but rarely on the relationship between the S/D process and V th.…”

Section: Introductionmentioning

confidence: 99%

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Yang

Gao

et al. 2023

ACS Appl. Electron. Mater.

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In this work, the source/drain (S/D) electrode process is considered to have a great impact on the mobility (μ FE )− threshold (V th ) trade-off for high-mobility amorphous oxide semiconductor (AOS) thin-film transistors. High-mobility AOS materials have worse oxygen-fixation ability compared to InGaZnO. In this work, we show that this is the case for the Mo S/D electrode process on InSnZnO channels and has a great impact on the mobility-threshold trade-off. Oxygen vacancy gradients are observed in the depth profile X-ray photoelectron spectroscopy analysis on InSnZnO after Mo S/D deposition and show a bigger change in oxygen vacancies (V O ) between the surface and inner layers and thicker compared to InGaZnO. This leads to an obvious negative shift in V th or even no switching characteristic. Postprocessing such as oxygen-plasma treatment can make V th positive but degrade the μ FE . In situ replenishing oxygen via adopting ITO S/D electrodes deposited in an oxygen-containing atmosphere facilitates the achievement of excellent overall electrical characteristics, with μ FE up to 87.1 cm 2 /Vs, V th ∼ −0.64 V, and I on /I off ∼ 2.3 × 10 8 .

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Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability

Cited by 19 publications

References 33 publications

The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin‐Film Transistors

The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin‐Film Transistors

The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

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