Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors

Wu, Zhendong; Zhang, Hengbo; Wang, Xiaolong; Zhou, Weisong; Liang, Lingyan; Cao, Yanwei; Cao, Hongtao

doi:10.1109/led.2021.3062369

Cited by 12 publications

(7 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The O1s peak (obtained from XPS spectra at the different etching depth) was fitted by three sub-peaks corresponding to metal− oxygen bonds (M−O, 529.8 ± 0.1 eV), oxygen vacancies (V O , 530.7 ± 0.1 eV), and oxygen−hydrogen bonds (−OH, 531.9 ± 0.1 eV). 25 ΔV O of ∼75% and the thickest V O -rich layer of ∼20 nm, comparable to the whole thickness (30 nm). Figure 2b depicts the XPS spectrum of In 3d 5/2 in the V Orich layer of high-In ITZO.…”

Section: Resultsmentioning

confidence: 56%

“…For further studies, O1s spectra are analyzed in detail. The O1s peak (obtained from XPS spectra at the different etching depth) was fitted by three sub-peaks corresponding to metal–oxygen bonds (M–O, 529.8 ± 0.1 eV), oxygen vacancies ( V O , 530.7 ± 0.1 eV), and oxygen–hydrogen bonds (−OH, 531.9 ± 0.1 eV) Figure a shows the V O change (Δ V O = V O content/ V O content at S/I interface – 1) varying from the semiconductor/insulator (S/I) to the metal/semiconductor (M/S) interface.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Yang

Gao

et al. 2023

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

In this work, the source/drain (S/D) electrode process is considered to have a great impact on the mobility (μ FE )− threshold (V th ) trade-off for high-mobility amorphous oxide semiconductor (AOS) thin-film transistors. High-mobility AOS materials have worse oxygen-fixation ability compared to InGaZnO. In this work, we show that this is the case for the Mo S/D electrode process on InSnZnO channels and has a great impact on the mobility-threshold trade-off. Oxygen vacancy gradients are observed in the depth profile X-ray photoelectron spectroscopy analysis on InSnZnO after Mo S/D deposition and show a bigger change in oxygen vacancies (V O ) between the surface and inner layers and thicker compared to InGaZnO. This leads to an obvious negative shift in V th or even no switching characteristic. Postprocessing such as oxygen-plasma treatment can make V th positive but degrade the μ FE . In situ replenishing oxygen via adopting ITO S/D electrodes deposited in an oxygen-containing atmosphere facilitates the achievement of excellent overall electrical characteristics, with μ FE up to 87.1 cm 2 /Vs, V th ∼ −0.64 V, and I on /I off ∼ 2.3 × 10 8 .

show abstract

Section: Resultsmentioning

confidence: 56%

Section: Resultsmentioning

confidence: 99%

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Yang

Gao

et al. 2023

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The TFT in this work, which utilized InSnZnO deposited by mist-CVD as the channel layer, shows higher μ FE and steeper SS when compared to TFTs that used sputtering-deposited and sol-gel derived InSnZnO films as the channel layer in the previous studies. 14,15,[20][21][22] Furthermore, the present InSnZnO TFT exhibits comparable electrical characteristics to the InGaZnO TFT deposited using the plasma-enhanced atomic layer deposition (PEALD) method. 24…”

Section: Resultsmentioning

confidence: 86%

Investigation of Contact Resistance Between Sputter-Deposited ITO and Mist-CVD-Deposited InSnZnO for Transparent Thin-Film Transistors Applications

Liu¹,

Liao²

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Transparent thin-film transistors based on InSnZnO ere investigated. The Al2O3 and InSnZnO thin films deposited using mist chemical vapor deposition are respectively used as the gate insulating and channel layers. The indium tin oxide (ITO) thin films deposited using the radio frequency (RF) sputtering method are served as the source/drain and gate electrodes. When an RF power of 45 W is used to deposit the ITO film, the lowest specific contact resistance of 9.7×10-3 Ω-cm2 and high optical transmittance of 72.4% are obtained. Furthermore, the thin-film transistor with ITO as the source/drain electrodes exhibits more stable electrical characteristics than the one with Al.

show abstract

“…The final prepared ITZO TFT had a mobility larger than 30 cm 2 /(V•s). In 2018, Park et al [40] compared ITZO TFT devices sputtered at different O 2 ratios and found that an increase in O 2 ratio significantly inhibited the content of oxygen vacancies in the film. Oxygen vacancies, as common carrier donors in MO films, can make the device easier to turn on and result in a larger negative V TH shift when there are too many oxygen vacancies.…”

Section: Optimization Of Deposition Technologymentioning

confidence: 99%

Advances in mobility enhancement of ITZO thin-film transistors: a review

Chen,

Zhang,

Wan

et al. 2023

J. Semicond.

View full text Add to dashboard Cite

Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.

show abstract

Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors

Cited by 12 publications

References 16 publications

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Investigation of Contact Resistance Between Sputter-Deposited ITO and Mist-CVD-Deposited InSnZnO for Transparent Thin-Film Transistors Applications

Advances in mobility enhancement of ITZO thin-film transistors: a review

Contact Info

Product

Resources

About