In this paper, we report on the fabrication and characterizations of a GaAs-based laser using the epitaxial lateral overgrowth (ELO) technique. ELO is an epitaxial growth technique capable of yielding low-dislocation-density III-V films on Si. To realize the effectivity of this procedure, two types of lasers were fabricated by changing the positions of the top p+-GaAs and metal contact in-line with the ELO layer and in-line with the line seed region. The longer lifetime for the lasers with the top p+-GaAs and metal contact in-line with the ELO layer proves the suitability of the ELO technique.
Articles you may be interested inLateral wavelength control of In As ∕ In Ga As P ∕ In P (100) quantum dots in the 1.55 μ m region by selectivearea metal organic vapor-phase epitaxy Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μmThe growth conditions of low-dimensional dot structures of strained In x Ga 1Ϫx As on Si substrates using the Stranski-Krastanov growth mode by metal-organic chemical vapor deposition are optimized. Atomic force microscopy measurement has been performed to characterize the dot structures. The dot density and their size are found to be strongly dependent on the substrate temperature, In content, and V/III ratio. The optimized growth condition was further used to fabricate quantum dot-like laser diodes on Si. The characteristics of the laser diode with an In x Ga 1Ϫx As quantum dot-like active region are analyzed.
The first room-temperature continuous-wave operation of a self-formed InGaAs quantum dot-like laser on a Si substrate fabricated by metalorganic chemical vapor deposition at atmospheric pressure is reported. This laser exhibits a threshold current density of 1.32 kA/cm 2 and a lasing wavelength of 854 nm with a spectral width of 1.6 nm. A significant improvement in the reliability has been found due to the quantum dot-like active region in the laser which reduces the dislocation numbers and hence provides a laser with a long lifetime.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.