First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum  Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Kazi, Zaman Iqbal; Egawa, Takashi; Jimbo, Takashi

doi:10.1143/jjap.39.3860

Cited by 12 publications

(3 citation statements)

References 11 publications

(7 reference statements)

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“…These values are comparable to that of reported results. 6,[21][22][23] Without facet coating, peak power as high as 12 mW per facet and a differential quantum efficiency of 22% were obtained.…”

Section: Resultsmentioning

confidence: 99%

Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping

Hydrick

Park

et al. 2009

J. Electrochem. Soc.

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GaAs/InGaAs quantum-well lasers have been demonstrated by metallorganic chemical vapor deposition on virtual Ge substrates on Si via aspect-ratio trapping ͑ART͒ and epitaxial lateral overgrowth ͑ELO͒. Laser-structure growth is achieved in two steps: The first step is growing uncoalesced defect-free Ge stripes on a SiO 2 trench-patterned silicon substrate via ART, whereby the misfit defects originating from the Ge/Si interface are trapped by laterally confining sidewalls. Defects arising from above the SiO 2 film are reduced by using an optimized ELO process followed by chemical mechanical polishing to provide a planar Ge surface. The second step is overgrowing a GaAs/InGaAs laser structure on the virtual Ge substrate. A number of GaAs/Ge integration issues, including Ge autodoping and antiphase domain defects in GaAs, have been overcome. Despite unoptimized laser structures with high series resistance and large threshold current densities, pulsed room-temperature lasing at a wavelength of 980 nm has been demonstrated using a combination of ART and ELO. This technique is very promising for the achievement of reliable GaAs-based optoelectronic devices on Si.

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Section: Resultsmentioning

confidence: 99%

Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping

Hydrick

Park

et al. 2009

J. Electrochem. Soc.

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“…In 2000, Kazi et al [28] fabricated the self-formed InGaAs QD-like structures on Si substrate by the metalorganic chemical vapor deposition (MOCVD) method. The atomic force microscopy (AFM) characterizations show that the as-formed InGaAs QD-like nanocrystals have a diameter of about 20 nm with an average height of 6 nm.…”

Section: Iii-v Semiconductor Qd Cw Lasers On Ge or Ge-on-si Substratesmentioning

confidence: 99%

Progress in semiconductor quantum dots-based continuous-wave laser

et al. 2020

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Continuous-wave (CW) operated laser is a key component for photonic chips. It has been highly desired to develop low-threshold, high-efficiency, long-term operational, low-cost and easily integratable CW laser. As excellent optical gain materials, quantum dots (QDs) have been intensively investigated for on-chip CW lasers owing to their high photoluminescence quantum yields, tunable emission wavelengths and easy integration. Base on the difference of preparation processes, QDs can be classified into epitaxial QDs and solution-processed colloidal QDs (CQDs). In this mini-review, we summarize the research progresses of epitaxial III-V semiconductor QD and solution-processed CQD-based CW lasers. The challenges associated with the realization of CQD CW lasers are discussed in detail. In particular, the emerging perovskite-based CW lasers are highlighted. Finally, a short perspective of QD-based CW lasers is presented.

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“…Lifetimes without asterisk (refs. ) indicate sudden device failure. Aging temperature is near room temperature.…”

Section: Laser Performance With 5 × Qd Layersmentioning

confidence: 99%

Recent Advances in InAs Quantum Dot Lasers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Jung

Norman

Wan

et al. 2018

Phys. Status Solidi A

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Recent advances in InAs quantum dot (QD) lasers epitaxially grown on onaxis (001) silicon are reported. Fabry-Perot QD lasers show a CW threshold current of 4.8 mA at 20 C, extrapolated laser lifetimes more than 10 million hours when aged at 35 C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of %0.1. Ultra-small microring QD lasers reveal a CW threshold of 0.5 mA and single-section mode-locked QD lasers demonstrate 490 fs ultra-short pulses at a 31 GHz repetition frequency. Possible ways to grow QD lasers on Si without misfit dislocations in active region are considered in order to further enhance reliability of QD Si lasers at high aging temperature and aging current density.

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First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Cited by 12 publications

References 11 publications

Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping

Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping

Progress in semiconductor quantum dots-based continuous-wave laser

Recent Advances in InAs Quantum Dot Lasers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

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