Growth of InxGa1−xAs quantum dots by metal–organic chemical vapor deposition on Si substrates and in GaAs-based lasers

Kazi, Zaman Iqbal; Egawa, Takashi; Jimbo, Takashi

doi:10.1063/1.1375010

Cited by 25 publications

(10 citation statements)

References 29 publications

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“…Linder et al demonstrated 1 μm wavelength In0.4Ga0.6As QD laser grown on Si requiring very low-temperature operation of 80 K and high Jth of 3.85 kA/cm 2 in 1999[140]. In 2001, Kazi et al reported InGaAs QD-like lasers grown on Si substrates emitting around 850 nm wavelength[141]. Soon, Mi and Yang et al investigated the effect of QD dislocation filter layer on the 1.1 µm wavelength InAs QD laser grown on Si substrate[142][143][144].…”

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confidence: 99%

Integration of III-V lasers on Si for Si photonics

Tang

Park

Wang

et al. 2019

Progress in Quantum Electronics

109

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Development of Si photonic integrated circuits (PICs) has been impeded due to lack of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and Si are very inefficient at emitting light. Therefore, direct-bandgap III-V semiconductors have been extensively exploited for the active region of the lasers for PICs. Heterogeneous and monolithic integration of III-V semiconductor components on Si platforms have been considered as promising solutions to achieve practical on-chip light-emitting sources for Si photonics. This paper reviews the latest developments on telecommunication wavelength III-V lasers integrated on Si substrates, in terms of integration methods and laser performance.

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confidence: 99%

Integration of III-V lasers on Si for Si photonics

Tang

Park

Wang

et al. 2019

Progress in Quantum Electronics

109

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“…FIG. 24,25 Finally, it is worth noting that improvements in growth of QD material 26 have allowed us to produce material that appears uniformly bright in EL images, which implies that the defect density is several orders of magnitude lower than the material used in this study ͑Ͻ10 4 cm −2 ͒. ͑Color online͒ HRTEM image of the defect in Fig.…”

Section: Discussionmentioning

confidence: 89%

Structural analysis of life tested 1.3 μm quantum dot lasers

Beanland

Sánchez

Childs

et al. 2008

Journal of Applied Physics

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Articles you may be interested inNegative characteristic temperature of long wavelength In As ∕ Al Ga In As quantum dot lasers grown on InP substrates Appl. Phys. Lett. 91, 261105 (2007); 10.1063/1.2827177 Over 1.3 μ m continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates Appl. Phys. Lett. 86, 203118 (2005); 10.1063/1.1931046Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001) We present the results of an accelerated life test study of quantum dot lasers operating at 1310 nm. The devices were run at 1 and 2 kA/ cm 2 ͑ϳ10 and ϳ70 times I th , depending on facet coatings͒, at temperatures of 80 and 100°C for 1350 h. Some devices, particularly those with higher current densities, showed significant drops in output power and increase in threshold current over this time. The devices were examined using electroluminescence, which shows nonradiative recombination centers in the active region of the device as dark spots. A clear correlation between the density of dark spots and degradation is observed. The defect structure responsible for the dark spots has been identified using conventional and high-resolution cross-section transmission electron microscopy of selected structures. The defects consist of an inverted stacking fault pyramid or microtwin enclosing the dot. The more extensive defects observed after the life test are consistent with their growth by climb, i.e., addition and/or removal of point defects. It is proposed that quantum dot devices show enhanced resistance to the growth of these defects in comparison with quantum well lasers.

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“…In 1990s, the threshold current density of semiconductor QW lasers was developed to the limit, and the advent of QD lasers makes it possible to further reduce due to the reduced density of states. As shown in Figure 14 [ 5 , 19 , 109 , 110 , 111 , 112 , 113 , 114 , 115 , 116 , 117 , 118 , 119 , 120 , 121 , 122 , 123 , 124 , 125 ], in a few years the threshold current density of QD lasers has exceeded the best value for QW lasers. Actually, only two years after the first demonstration of the QD laser, a very low threshold current density of ∼60 A/cm −2 was achieved for a QD laser with a vertically coupled QD structure to overcome the GS gain saturation [ 121 ].…”

Section: Physics and Device Properties Of Qdsmentioning

confidence: 99%

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

et al. 2022

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Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented.

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Growth of InxGa1−xAs quantum dots by metal–organic chemical vapor deposition on Si substrates and in GaAs-based lasers

Cited by 25 publications

References 29 publications

Integration of III-V lasers on Si for Si photonics

Integration of III-V lasers on Si for Si photonics

Structural analysis of life tested 1.3 μm quantum dot lasers

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

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