Integration of III-V lasers on Si for Si photonics

Tang, Mingchu; Park, Jae-Seong; Wang, Zhechao; Chen, Siming; Jurczak, P.; Seeds, A.J.; Liu, Huiyun

doi:10.1016/j.pquantelec.2019.05.002

Cited by 109 publications

(76 citation statements)

References 199 publications

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“…A high-performance InAs/GaAs QD laser monolithically grown on Si was demonstrated with a low cw threshold current density of 173 Acm -2 , high single-facet output power exceeding 100 mW, and a high operation temperature of 105 °C under pulsed mode. In contrast, an InGaAs/GaAs QW laser with a similar TD density grown on Si substrate under identical conditions showed no lasing behavior at room temperature, confirming the advantages of QDs over QW-based active regions in lasers monolithically grown on Si [42]. These advantages are well explained by our model.…”

Section: Discussionsupporting

confidence: 71%

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Liu

Martin

Baron

et al. 2020

J. Lightwave Technol.

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High-performance III-V quantum-dot lasers monolithically grown on Si substrates have been demonstrated as a promising solution to realise Si-based laser sources with very low threshold current density, high output power and long lifetime, even with relatively high density of defects due to the material dissimilarities between III-Vs and Si. On the other hand, although conventional III-V quantum-well lasers grown on Si have been demonstrated after great efforts worldwide for more than 40 years, their practicality is still a great challenge because of their very high threshold current density and very short lifetime. However, the physical mechanisms behind the superior performance of silicon-based III-V quantum-dot lasers remain unclear. In this paper, we directly compare the performance of a quantum-well and a quantum-dot laser monolithically grown on on-axis Si (001) substrates, both experimentally and theoretically, under the impact of the same density of threading dislocations. A quantum-dot laser grown on a Si substrate with a high operating temperature (105 °C) has been demonstrated with a low threshold current density of 173 A/cm 2 and a high single facet output power >100 mW at room temperature, while there is no lasing operation for the quantum-well device at room temperature even at high injection levels. By using a rate equation travelling-wave model, the quantum-dot laser's superior performance compared with its quantum well-based counterpart on Si is theoretically explained in terms of the unique properties of quantum dots, i.e., efficient carrier capture and high thermal energy barriers preventing the carriers from migrating into defect states.

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Section: Discussionsupporting

confidence: 71%

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Liu

Martin

Baron

et al. 2020

J. Lightwave Technol.

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“…With the DFL technique, researchers make it possible to reduce the vast number of TDs to a level which is commercially viable in a thin film around 2.5 μm. This technique has promoted the implement of III-V materials directly grown on Si such as growth of III-V lasers on Si substrates [27,50].…”

Section: Resultsmentioning

confidence: 99%

“…The technology of monolithic integration of III-V on Si is of great interest due to combining the superior optical properties of III-V materials and the advantages of Si substrates such as low cost and high scalability [27]. However, as most III-V semiconductor materials have a relative large difference in lattice constant to Si, high density of crystal defects are generated during the epitaxial growth.…”

Section: Introduction To Dislocationsmentioning

confidence: 99%

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GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Martin¹,

Baron²,

Bogumulowicz³

et al. 2021

Post-Transition Metals

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III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. Integration of III-V devices onto a Si CMOS platform is already in production using III-V devices transfer. A promising way consists in using hetero-epitaxy processes to grow the III-V materials directly on Si and at the right place. To reach this objective, some challenges still needed to be overcome. In this contribution, we will show how to overcome the different challenges associated to the heteroepitaxy and integration of III-As onto a silicon platform. We present solutions to get rid of antiphase domains for GaAs grown on exact Si(100). To reduce the threading dislocations density, efficient ways based on either insertion of InGaAs/GaAs multilayers defect filter layers or selective epitaxy in cavities are implemented. All these solutions allows fabricating electrically pumped laser structures based on InAs quantum dots active region, required for photonic and sensing applications.

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“…[ 72 ] Among various wafer bonding techniques, direct bonding and adhesive bonding are most developed. [ 73 ] The direct bonding technique enables high bonding strength between two contacted wafers or dies with the assistance of O 2 plasma treatment. In 2012, Arakawa et al.…”

Section: Brief Review Of Ge‐on‐si and Iii‐v‐on Si Lasersmentioning

confidence: 99%

Emerging Light‐Emitting Materials for Photonic Integration

Liu

et al. 2020

Advanced Materials

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Nowadays, apart from data communication and telecommunication, photonic integrated systems also show great potential in bio/chemical sensing, medical imaging, and spectroscopy. [5-14] Benefit from mature complementary metal-oxide-semiconductor (CMOS) technology in the past two decades, many high-performance key components in photonic integrated systems have been realized, such as low-loss waveguides, ultrafast modulators, and large bandwidth photodetectors. [15-17] However, the lack of efficient light sources presents a huge roadblock and significantly slows down the progress of photonic integration. In terms of energy efficiency and scalability, on-chip light sources greatly surpass the off-chip light sources. [18] On-chip coupling allows flexible layouts and highdensity integration without introducing extra packaging cost and off-chip coupling losses. An ideal on-chip light source should satisfy the following requirements: emission at communication wavelengths, e.g. 850, 1310, or 1550 nm; continuous wave (CW) operation via electrical pumping at room temperature; high output power with low energy consumption, i.e., high efficiency and low threshold; CMOS-compatible fabrication techniques. Because of the poor radiative recombination efficiency of silicon, researchers have turned their attention to germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers, which have been summarized in the literature. [19-21] Although the above-mentioned requirements may be relaxed to some extent according to different application scenarios, these new light sources have also encountered various difficulties and challenges on the way to practical applications (see Section 2). Therefore, it is still necessary and urgent to identify alternatives for the photonic integrated system. In the past 10 years, 2D materials and metal halide perovskites are undoubtedly two rising stars in the semiconductor field. These emerging materials with unique properties are widely used in optoelectronic devices, such as solar cells, photodetectors, light-emitting diodes (LEDs), and lasers. [22,34] Especially in the application of on-chip light sources, these materials show some advantages over Ge and III-V semiconductors. Both 2D materials and metal-halide perovskites have a variety of low-cost preparation methods. Both of them can be easily integrated on foreign substrates. More importantly, 2D materials and metal-halide perovskites own novel and charming luminescence properties. These materials with diverse energy bandgaps cover a broad spectral range, [22,35-37] which implies that the emission wavelength can be selected to accommodate different applications. Great advances of 2D material and The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-...

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Integration of III-V lasers on Si for Si photonics

Cited by 109 publications

References 199 publications

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Emerging Light‐Emitting Materials for Photonic Integration

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