Structural analysis of life tested 1.3 μm quantum dot lasers

Beanland, Richard; Sánchez, Ana; Childs, David; Groom, K. M.; Liu, H. Y.; Mowbray, D. J.; Hopkinson, M.

doi:10.1063/1.2827451

Cited by 46 publications

(16 citation statements)

References 28 publications

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“…As shown in Figure 1b and c, a Figure 1b and c also reveal that the threading dislocation can be either pinned or propelled away from QDs. Therefore, the strong strain field of a QD array also prevents the in-plane motion of dislocations, and therefore superior reliability is expected from QD lasers compared with QW or bulk devices, even in the presence of high-density dislocations 22,23 .These unique properties of QDs provide a promising route towards monolithic III-V on silicon (III-V/Si) integration. As shown in Figure 1a, III-V QD lasers grown on silicon are rapidly approaching the performance of those grown on native GaAs substrates 24,25 .…”

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Electrically pumped continuous-wave III–V quantum dot lasers on silicon

et al. 2016

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Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate the first continuous-wave InAs/GaAs quantum-dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A/cm 2 , a room-temperature output power exceeding 105 mW, lasing operation up to 120 o C, and over 3,100 hours of continuous-wave operating data collected, giving an extrapolated mean time to failure of over 100,158 hours. The realization of highperformance quantum-dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 10 5 cm -2 in the III-V epilayers by combining a nucleation layer and dislocation filter layers with in-situ thermal annealing. These results are a major advance towards silicon-based photonics and photonic-electronic integration, and could provide a route towards reliable and cost-effective monolithic integration of III-V devices on silicon.Increased data throughput between silicon processors in modern information processing demands unprecedented bandwidth and low power consumption beyond the capability of conventional copper interconnects. To meet these requirements, silicon photonics has been under intensive study in recent years 1,2 . Despite rapid progress being made in silicon-based light modulation and detection technology and low-cost silicon optoelectronic integrated devices enabled by the mature CMOS technology 3,4 , an efficient reliable electrically pumped laser on a silicon substrate has remained an unrealized scientific challenge 5 . Group IV semiconductors widely used in integrated circuits, e.g. silicon and germanium, are inefficient light-emitting materials due to their indirect bandgap, introducing a major barrier to the development of silicon photonics. Integration of IIIÐV materials on a silicon platform has been one of the most promising techniques for generating coherent light on silicon. IIIÐV semiconductors with superior optical properties, acting as optical gain media, can be either bonded or epitaxially grown on silicon substrates [6][7][8][9][10][11] , with the latter approach being more attractive for large scale, low-cost, and streamlined fabrication. However, until now, material lattice mismatch and incompatible thermal expansion coefficients between IIIÐV materials and silicon substrates have fundamentally limited the monolithic growth of IIIÐV lasers on silicon substrates by introducing high-density threading dislocations (TDs) 12 .Lasers with active regions formed from III-V quantum dots (QDs), nano-size crystals, can not only offer low threshold current density (J th ) but also reduced temperature sensitivity [13][14][15][16][17] . As shown in Figure 1a, within less than 10 years, the performance of QD lasers has surpassed state-of-the-art quantum-well (QW) lasers developed over the last few decades in terms of J th . QD lasers have now been demonstrated with nearly constan...

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Electrically pumped continuous-wave III–V quantum dot lasers on silicon

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“…QD arrays can also prevent dislocation movement because of the strong strain field. In the case of a high‐density nonradiative composite center, QD lasers still have a longer lifetime and higher reliability than those of QW devices …”

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Perovskite quantum dot lasers

Chen

Shi

et al. 2019

InfoMat

111

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Owing to the excellent properties of perovskite quantum dots (QDs), such as an easy synthesis process, high photoluminescence quantum yields, high defect tolerance, and tunable bandgap with different elements, laser actions have been widely conducted. Over the past few years, several approaches have been used for successfully creating perovskite QD lasers. In this review, we summarize the progress of perovskite QD lasers from the aspects of laser theory, characteristics and applications of QD lasers, advantages of perovskite materials for lasers, factors influencing the QD laser threshold, two-photon pumped QD lasers, and perovskite QD laser stability. At the same time, aiming at existing problems, possible solutions and prospects are presented. K E Y W O R D Slaser optical gain, perovskite, quantum dot, stability, threshold Jie Chen and Wenna Du contributed equally to this work.

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“…These differences between III-V and Group IV materials tend to produce various types of defects-APBs, threading dislocations (TDs), and microcracks-which all generate nonradiative recombination centers and dramatically undermine the promise of III-V materials [28]. Over the last two decades, III-V QD light sources, including LDs and SLDs, have been demonstrated with much lower threshold current density [29]- [31] and significantly reduced temperature sensitivity [32] than III-V quantum well (QW) devices due to their delta-function-like density of states [33], [34]. Also, the superiority of QD structures for achieving broad bandwidth in SLDs is well established owing to their naturally large size inhomogeneity when grown by the S-K growth mode [35].…”

Section: Introductionmentioning

confidence: 99%

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Liao

Chen

Huo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated Manuscript lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.Index Terms-Molecular beam epitaxy, quantum dots, semiconductor lasers, silicon photonics, focused ion beam. College London, where he is currently a Professor of semiconductor photonics. His research interests include the nanometer-scale engineering of low-dimensional semiconductor structures (such as quantum dots, quantum wires, and quantum wells) by using molecular beam epitaxy and the development of novel optoelectronic devices including lasers, detectors, and modulators by developing novel device process techniques. He has co-authored more than 300 papers in the area of semiconductor materials and devices.

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Structural analysis of life tested 1.3 μm quantum dot lasers

Cited by 46 publications

References 28 publications

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Perovskite quantum dot lasers

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

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