Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth    by Metalorganic Chemical Vapor Deposition

Kazi, Zaman Iqbal; Thilakan, P.; Egawa, Takashi; Umeno, Masayoshi; Jimbo, Takashi

doi:10.1143/jjap.40.4903

Cited by 58 publications

(32 citation statements)

References 10 publications

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“…For more information, see http://creativecommons.org/licenses/by/3.0/ the extent of which impacts overall life-time of the device. Initial reports of degradation studies carried out with InAs/GaAs quantum dot (QD) laser structures grown on Ge-on-Si 'virtual' substrates revealed extrapolated lifetimes (doubling of threshold current) exceeding 4600 hours, significantly out performing lasers with quantum well (QW) active regions also grown on Si [13], [14]. This significant result was predicted and has been attributed to two major advantages of using QDs.…”

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confidence: 99%

“…With QW active regions, carriers are able diffuse in the plane of the well and therefore capture into a defect state is more probable. This lack of carrier localization compared to QDs, combined with the inability to effectively deflect dislocations, means QW lasers grown on Si substrates experience very short lifetimes [14], [16]. However, it is important to note that the quantum dots used in laser structures are populated via bulk and 2-dimensional states and carrier localisation only occurs if the majority of the carriers populate the localised quantum dot states and not the extended states.…”

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confidence: 99%

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Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Shutts

Allford

Spinnler

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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Initial age-related degradation mechanisms for InAs quantum dot lasers grown on silicon substrates emitting at 1.3 µm are investigated. The rate of degradation is observed to increase for devices operated at higher carrier densities and is therefore dependent on gain requirement or cavity length. While carrier localization in quantum dots minimizes degradation, an increase in the number of defects in the early stages of aging can increase the internal optical-loss that can initiate rapid degradation of laser performance due to the rise in threshold carrier density. Population of the two-dimensional states is considered the major factor for determining the rate of degradation, which can be significant for lasers requiring high threshold carrier densities. This is demonstrated by operating lasers of different cavity lengths with a constant current and measuring the change in threshold current at regular intervals. A segmented-contact device, which can be used to measure the modal absorption and also operate as a laser, is used to determine how the internal optical-loss changes in the early stages of degradation. Structures grown on silicon show an increase in internal optical loss, whereas the same structure grown on GaAs shows no signs of increase in internal optical loss when operated under the same conditions.

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confidence: 99%

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confidence: 99%

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Shutts

Allford

Spinnler

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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“…[1][2][3][4][5][6][7][8] The materials engineering solutions to circumvent the lattice mismatch include metamorphic growth, 9,10 graded buffer layers, 11,12 selective epitaxial overgrowth, 13,14 and a variety of defect filtering strategies. [15][16][17][18][19][20] One of these engineering solutions is the use of virtual substrates, which consists of low-dislocation-density Ge grown on Si 12,21-23 and subsequently integrating III-V materials.…”

Section: Introductionmentioning

confidence: 99%

Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineering

Sheng

Leonhardt

Han

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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High-quality Ge-on-Si heterostructures have been explored for many applications, including near infrared photodetectors and integration with III–V films for multijunction photovoltaics. However, the lattice mismatch between Ge and Si often leads to a high density of defects. Introducing annealing steps prior to and after full Ge island coalescence is found to reduce the defect density. The defect density in Ge is also found to decrease with increasing dopant density in Si substrates, likely due to the defect pinning near the Ge-Si interface by dopants. The authors establish an empirical correlation between the minority carrier lifetime (τG) and the defect density in the Ge film (ρD) as a function of distance from the Ge-Si interface: τGe = C/ρD, where C is a proportionality constant and a fitting parameter which is determined to be 0.17 and 0.22 s/cm2 for Ge films grown on low-doped, high-resistivity Si substrates and high-doped, low-resistivity Si substrates, respectively. The effective minority carrier lifetime measured as a function of Ge film thickness is then related to the recombination velocity on Ge film surface, average minority carrier lifetime within Ge film, and recombination velocity at the Ge-Si interface. Using this relation, the authors estimate the Ge-Si interface recombination velocity for Ge films grown on low-doped, high-resistivity and high-doped, low-resistivity Si substrates to be 220 and 100 cm/s, respectively.

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“…Several attempts as special buffer layer sequences [1,2] and structured substrates [3] were partly successful and led to demonstrators of transistor and photodetector devices [2,4] which are usually less sensitive to high dislocation densites. However, light emitters, especially laser devices on Si, show only lifetimes of more than a few days [5]. Group-III nitrides are much less sensitive to high dislocation densities and commercially available LEDs have a dislocation density in the range of 10 9 cm -2 .…”

Section: Introductionmentioning

confidence: 99%

Gallium‐nitride‐based devices on silicon

Dadgar

Poschenrieder

Daumiller

et al. 2003

phys. stat. sol. (c)

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GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crackfree, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz.

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Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition

Cited by 58 publications

References 10 publications

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineering

Gallium‐nitride‐based devices on silicon

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