Gain coefficient, quantum efficiency, transparency current density, and internal loss of the AlGaAs-GaAs-based lasers on Si substrate

Kazi, Zaman Iqbal; Egawa, Takashi; Jimbo, Takashi

doi:10.1109/68.806847

Cited by 20 publications

(6 citation statements)

References 10 publications

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“…[13,14] In order to improve the crystalline quality, various defect reduction methods have been proposed in the past two decades, such as the two-step growth, thermal cycle annealing, strained-layer superlattices (SLS), and patterned substrates. [15][16][17][18][19][20][21][22] According to dislocation theory, the strain field can bend dislocations, and result in their interaction or propagation toward wafer edges. Owing to the fact that the strain field around quantum dots (QDs) is much stronger than that of SLS, the built-in strain field of QD is recently introduced into epilayers to impede or bend threading dislocations generated at large misfit interfaces.…”

Section: Introductionmentioning

confidence: 99%

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

Wang

Deng

et al. 2015

Chinese Phys. B

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The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots (QDs) as dislocation filters by metalorganic chemical vapor deposition (MOCVD) is investigated in detail. The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized. It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film. Compared with the dislocation density of 5×10 7 cm −2 in the GaAs/Si sample without QDs, a density of 2×10 6 cm −2 is achieved in the sample with QD dislocation filters.

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Section: Introductionmentioning

confidence: 99%

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

Wang

Deng

et al. 2015

Chinese Phys. B

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“…The dot density is an important factor in order for the QD laser to have a lower threshold current density as the light is confined to the dots only. 6) The optimum density of QDs renders the active region of a laser entirely dislocation-free. Figure 2 depicts the schematic structure of the In 0.2 Ga 0.8 As QD-like laser on a Si substrate.…”

Section: Methodsmentioning

confidence: 99%

First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Kazi

Egawa

Jimbo

2000

Jpn. J. Appl. Phys.

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The first room-temperature continuous-wave operation of a self-formed InGaAs quantum dot-like laser on a Si substrate fabricated by metalorganic chemical vapor deposition at atmospheric pressure is reported. This laser exhibits a threshold current density of 1.32 kA/cm 2 and a lasing wavelength of 854 nm with a spectral width of 1.6 nm. A significant improvement in the reliability has been found due to the quantum dot-like active region in the laser which reduces the dislocation numbers and hence provides a laser with a long lifetime.

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“…We calculated Γ by the equivalent refractive index method. We used the following expression [18] to calculate J th :…”

Section: Design and Fabrication Of A Si Lasermentioning

confidence: 99%

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

Tanaka

Kawazoe

Ohtsu

et al. 2015

Fluorescent Materials

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Abstract:We fabricated a silicon (Si) laser by applying a dressed-photon-phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon-insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing light waveguides. We designed light waveguides having a thickness of 15 µm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 µm. The intensity of amplified spontaneous emission (ASE) light was too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm 2 from the currentvoltage characteristic. This threshold current density was twenty-eight times smaller than that of a Si laser we fabricated previously.

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Gain coefficient, quantum efficiency, transparency current density, and internal loss of the AlGaAs-GaAs-based lasers on Si substrate

Cited by 20 publications

References 10 publications

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

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