2015
DOI: 10.1515/fma-2015-0001
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Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

Abstract: Abstract:We fabricated a silicon (Si) laser by applying a dressed-photon-phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon-insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing light waveguides. We designed light waveguides having a thickness of 15 µm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 µm. The … Show more

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Cited by 4 publications
(3 citation statements)
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“…of this paper 11 . The fabrication and operation principles of this device are based on the concept of the DP and are equivalent to those of highly efficient silicon light-emitting devices (i.e., LEDs and LDs) [12][13][14][15][16][17][18] ,specifically, these Si devices emit photons with high efficiency by exchanging the momenta of the electrons in the conduction band with those of phonons, which are the constituent elements of the DPs.…”
mentioning
confidence: 99%
“…of this paper 11 . The fabrication and operation principles of this device are based on the concept of the DP and are equivalent to those of highly efficient silicon light-emitting devices (i.e., LEDs and LDs) [12][13][14][15][16][17][18] ,specifically, these Si devices emit photons with high efficiency by exchanging the momenta of the electrons in the conduction band with those of phonons, which are the constituent elements of the DPs.…”
mentioning
confidence: 99%
“…At the end of this section, the fact that Si lasers have also been fabricated by DP-assisted annealing should be briefly reviewed. One example is a CW single-mode laser with a ridge waveguide structure of 500 µm length operated under room temperature (Figures 5(a) and 5(b)) [46]. Another example is a similarly operated quasi-CW multi-mode high-power laser (maximum output power = 100 W) with a long cavity (30 mm length) (Figure 5(c)) [7,47].…”
Section: Time Difference (Ns)mentioning
confidence: 99%
“…Accordingly, with respect to Si, which is an indirect transition semiconductor, we have reported many high-efficiency light-emitting devices that utilize stimulated emission based on phonon-assisted processes. [19][20][21][22][23] The present photodetector is based on a mechanism utilizing carrier density changes due to this stimulated emission. Figure 1(a) shows a band diagram describing the mechanism of the present device.…”
mentioning
confidence: 99%