Articles you may be interested inFingerprints of the hydrogen bond in the photoemission spectra of croconic acid condensed phase: An x-ray photoelectron spectroscopy and ab-initio study Qualitative analysis of a diamondlike carbon film by angle-resolved x-ray photoelectron spectroscopy

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A fine-powdered sample of high purity SnO2 gave a strong ESR signal (gav≈1.90) after reduction in vacuum. This BSR center, like the g≈1.96 center of ZnO, is associated with the n-type conduction. When the sample was exposed to O2 or H2, the spin concentration, the full half width and also the electric conductance were changed. These variations are well explained by assuming that the fine-powdered SnO2 has double donor centers originated from both bulk and surface oxygen vacancies, The gav≈1.90 center may be due to the un-ionized deep donor electrons trapped in the surface oxygen vacancy.

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The XPS method combined with argon-ion etching has been applied in order to study the chemical depth profile of surface thermal-oxide layers on GaP(1̄1̄1̄). The influence of the ion etching process on the depth profile has been studied. The deviation of the measured profile from the true one was caused mainly by the fact that atoms are not removed layer by layer by ion etching. The thermal oxide formed on GaP has been identified as GaPO4. It has been found that the width of the transition region increases as the thickness of the surface oxide layers increases. For example, when GaP(1̄1̄1̄) is oxidized at 700°C for 15 min, a surface oxide layer of 340 Å is formed, and the transition region has a width of 175±73 Å.