An XPS Analysis of Thermally Grown Oxide Film on GaP

Nishitani, Ryusuke; Iwasaki, Hiroshi; Mizokawa, Yusuke; Nakamura, Shōgo

doi:10.1143/jjap.17.321

Cited by 44 publications

(18 citation statements)

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“…On other surfaces where M -M dimers are not present, M -O-P bonds should dominate. These conclusions are consistent with suggestions from several experiments on InP and GaP oxidation 23,24,26,[66][67][68][69] . However, we should note that for the (100) surface, M -O-M is an exclusively surface-adsorbed topology, whereas M -O-P features oxygen incorporated in the subsurface.…”

Section: Discussionsupporting

confidence: 93%

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Wood

Ogitsu

Schwegler

2012

The Journal of Chemical Physics

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We perform density-functional theory calculations on model surfaces to investigate the interplay between the morphology, electronic structure, and chemistry of oxygen-and hydroxyl-rich surfaces of InP(001) and GaP(001). Four dominant local oxygen topologies are identified based on the coordination environment: M -O-M and M -O-P bridges for the oxygen-decorated surface; and M -[OH]-M bridges and atop M -OH structures for the hydroxyl-decorated surface (M =In,Ga). Unique signatures in the electronic structure are linked to each of the bond topologies, defining a map to structural models that can be used to aid the interpretation of experimental probes of native oxide morphology. The M -O-M bridge can create a trap for hole carriers upon imposition of strain or chemical modification of the bonding environment of the M atoms, which may contribute to the observed photocorrosion of GaP/InP-based electrodes in photoelectrochemical cells. Our results suggest that a simplified model incorporating the dominant local bond topologies within an oxygen adlayer should reproduce the essential chemistry of complex oxygen-rich InP(001) or GaP(001) surfaces, representing a significant advantage from a modeling standpoint.

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Section: Discussionsupporting

confidence: 93%

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Wood

Ogitsu

Schwegler

2012

The Journal of Chemical Physics

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“…The residual oxide was assumed to be similar in composition to the thermal oxide on GaP ͑i.e., GaPO 4 ͒, with a full monolayer thickness of 0.27 nm. 28,40 The escape depths of Ga 3d and P 2p electrons were estimated through Eq. 2…”

Section: Methodsmentioning

confidence: 99%

Physicochemical and Electrochemical Properties of Etched GaP(111)A and GaP(111)B Surfaces

Mukherjee¹,

Erickson

Maldonado³

2010

J. Electrochem. Soc.

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The observable chemical, electrochemical, and morphological features of GaP͑111͒ surfaces after wet chemical etching have been assessed using X-ray photoelectron spectroscopy, atomic force microscopy, and electrochemical impedance spectroscopy. HF͑aq͒, NH 4 F͑aq͒, H 2 SO 4 ͑aq͒, HCl͑aq͒, HCl-HNO 3 ͑aq͒, and dilute Br 2 in CH 3 OH ͑with and without a follow-up alkaline etch͒ are all potent etchants for GaP͑111͒ but yield distinctly different GaP͑111͒A and GaP͑111͒B surface conditions. Freshly etched GaP͑111͒B interfaces show higher residual oxide coverages and are generally rougher than similarly treated GaP͑111͒A surfaces. Differential capacitance measurements of n-GaP͑111͒A and n-GaP͑111͒B electrodes show that various etchants result in a wide range of apparent values for the conduction bandedge potentials, spanning approximately 700 mV in acetonitrile. These data show that these etched surfaces are not equivalent and that the observable physicochemical and electrochemical properties of GaP͑111͒ are strongly influenced by the choice of wet chemical etchant. Additionally, X-ray photoelectron spectra show that adsorption of ͑4-fluorophenyl͒methanethiol onto GaP͑111͒ is insensitive to surface orientation or etching method, indicating no dominant covalent interaction between organic thiols and GaP͑111͒ interfaces.

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“…14,15,20,21 While the analysis of insulating films can be complicated by charging and preferentially sputtering, it is a valuable tool in determining the primary chemical compounds that make up the grown oxides.…”

Section: Resultsmentioning

confidence: 99%

“…2 based on the results of Schwartz et al and reports of oxides grown on GaP. [13][14][15][16][17][18] Combining these two-dimensional diagrams results in the three-dimensional diagram of Fig. 3 showing only the internal planes.…”

Section: Phase Diagramsmentioning

confidence: 99%

Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

Pulver¹,

Wilmsen²,

Niles³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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An investigation of the chemical composition of wet thermal oxides grown on In0.5Ga0.5P and In0.5Al0.5P is reported. The oxides were grown in the temperature range 500–650 °C. An estimate of the expected oxide composition was obtained by the construction of three-dimensional phase diagrams of the In–Ga–P–O and In–Al–P–O systems. These diagrams indicate that under thermodynamic equilibrium, the oxide layers should be composed primarily of mixtures of InPO4 and GaPO4 on In0.5Ga0.5P and InPO4 and AlPO4 on In0.5Al0.5P. X-ray photoemission spectroscopy (XPS) sputter profiles were used to determine the distribution of elements in the oxide layers and to identify the chemical compounds. The binding energy shifts observed in the XPS data suggests that the oxides are composed primarily of metal phosphates with low concentrations of the metal trioxides. At lower growth temperatures, the oxides composition is uniform with depth, but there is an increasing depletion of In near the substrate interface as the growth temperature increases.

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An XPS Analysis of Thermally Grown Oxide Film on GaP

Cited by 44 publications

References 0 publications

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Physicochemical and Electrochemical Properties of Etched GaP(111)A and GaP(111)B Surfaces

Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

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