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The thermal oxidation of InP has been studied for growth temperatures of 400 to 700 °C using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) profiles and x-ray diffraction. For T<600 °C the composition of the oxide is layered. The outer layer is composed of In2O3 and InPO4 and the inner layer is primarily InPO4 with elemental P at the interface. For T>650 °C the oxide composition is primarily InPO4 throughout the layer although the roughness of the high temperature oxide may distort the XPS sputter profiles. From x-ray diffraction data, the oxides grown at T<650 °C appear noncrystalline. At T=700 °C the oxide is crystalline InPO4.
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