The chemical composition changes of silicon and phosphorus in the process of native oxide formation of heavily phosphorus doped silicon

Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation

“…Figure 2 shows the XPS spectra obtained during different etching cycles for the phosphorus junction annealed at 500 • C for 640 min after laser activation. The original spectrum taken before etching process shows a sharp peak at a binding energy of around 129 eV, which is close to that of phosphorus 2p peak reported by Ying et al [10]. However, a broad peak at a binding energy of around 134 eV was also demonstrated in the spectrum.…”

“…However, the broad peak in XPS spectra remained during the etching process, suggesting that its signal was mainly contributed by the substrate. The broad peak is therefore believed to be attributed to the plasmon loss of silicon 2p photoelectrons, according to the analysis conducted by Ying et al [10]. Figure 3 compares the results of angle dependent XPS for samples without carbon before and after deactivation annealing at 500 • C. The ratio of the intensity of the broad peak to that of the sharp peak decreased with the increasing photoemission angle.…”

Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap

“…2(a). However, a weak peak centered at 129.6 eV, which is attributed to the formation P-Si bonds, 17 can be observed for P-doped samples with R=0.6 and the peak becomes stronger for samples with R=1. It is estimated that the P doping concentration is about 2.1 % and 2.3 % for samples with R= 0.6 and 1, respectively.…”

Wear mechanisms and friction parameters for sliding wear of micron-scale polysilicon sidewalls

“…This is attributed to re-growth of the native oxide layer that was removed during the wear process [49]. Studies of native SiO 2 growth on single crystal silicon shows a constantly increasing growth [74] that continues beyond the testing time shown in Fig. 6.…”