A good thermoelectric material usually has a high power factor and low thermal conductivity for high figure of merit (ZT), and is also environmentally friendly and economical.

Phosphorus (P) and Boron (B) co-doping effects at the nanoscale in Si nanocrystals/SiO2 multilayers have been studied in the present work. Several interesting experimental results are achieved which are in contrast to the case in bulk-Si and the previous observations on the doped Si nanocrystals. It is found that all the co-doping samples are n-type regardless of B doping ratios. The P doping efficiency in Si NCs is higher than B dopants, and it can be improved via B co-doping with suitable levels. Raman and ESR spectra indicate that the different occupation preferences of P and B in Si NCs are responsible for the interesting co-doping behaviors. It looks like that the electronic structures and the physical properties of Si NCs can be modulated via the impurities co-doping approach.

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Hybrid organic-inorganic perovskites (HOIPs) exhibit long electronic carrier diffusion length, high optical absorption coefficient, and impressive photovoltaic device performance. At the core of any optoelectronic device lie the charge transport properties, especially the microscopic mechanism of scattering, which must efficiently affect the device function. In this work, CH 3 NH 3 PbI 3 (MAPbI 3) films were fabricated by a vapor solution reaction method. Temperature-dependent Hall measurements were introduced to investigate the scattering mechanism in MAPbI 3 films. Two kinds of temperature-mobility behaviors were identified in different thermal treatment MAPbI 3 films, indicating different scattering mechanisms during the charge transport process in films. We found that the scattering mechanisms in MAPbI 3 films were mainly influenced by the decomposed PbI 2 components, which could be easily generated at the perovskite grain boundaries (GBs) by releasing the organic species after annealing at a proper temperature. The passivation effects of PbI 2 in MAPbI 3 films were investigated and further discussed with emphasis on the scattering mechanism in the charge transport process.

The effects of ionic doping in Bi0.5Na0.5TiO3 (BNT) ceramics were investigated. Pure and doped BNT samples containing 0 to 16 at.% Ba2+ and 0 to 1.0 at.% Ce4+ were synthesized at 1135 to 1200 °C for 2 h in ambient atmosphere. Temperature dependences of dielectric properties were analyzed. These results suggest that Ba2+ and Ce4+ replace the ions in A and B sites of perovskite structures, and the lattice structure is altered. The component differences of each crystal domain lead to variance of phase transition temperature, which enhances the relaxation character in BNT ceramics, and the dielectric properties were consequently improved.

High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level on account of the changing P doping concentration. By controlling the P doping concentration in the films, the room temperature conductivity can be enhanced by seven orders of magnitude than the un-doped sample, reaching values up to 110 S/cm for heavily doped sample. The changes from Mott variable-range hopping process to thermally activation conduction process with the temperature are identified and discussed.

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