Light‐emitting diodes based on perovskite quantum dots have attracted much attention since they can be applied in low‐cost display, biosensors, and other optoelectronic devices. Here, all‐inorganic light‐emitting diodes based on n‐type perovskite quantum dots/p‐Si heterojunction are fabricated. Both the green and the red light emission are achieved at room temperature. The output power density is 0.14 mW cm−2 for green light device and 0.25 mW cm−2 for the red one. The relatively low turn on voltage and high emission intensity in red light device can be attributed to the small hole injection barrier between CsPbI3 quantum dots and p‐Si. The emission drop off at high current density is observed under direct current (DC) driving mode, which is significantly improved by applying alternating current (AC) square pulses. The enhanced electroluminescence and the improved operation stability at high current density under AC driving mode can be attributed to the less thermal degradation and the reduced charge accumulation in the interface defect states due to the alternated biases. The results demonstrate the possibility of integrating the perovskite quantum dots with Si platform, which will be helpful to extend their actual applications.

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Here, we report the enhanced luminescence and optical gain by appropriate P-doping in Si nanocrystals (NCs)/SiO multilayers with ultra-small size of ∼1.9 nm. The luminescence intensity is enhanced by 19.4% compared to that of an un-doped NC and the optical gain is as high as 171.8 cm, which can be attributed to the reduction of surface defect states by the passivation of P impurities as revealed by electron spin resonance spectra. Further increasing the P-doping ratios results in the increase of conduction electrons due to the substitutional doping of phosphorus in the Si NCs, which favors the Auger recombination process. Consequently, both the luminescence intensity and the optical gain decrease rapidly. It is demonstrated that introduction of the suitable impurities can effectively modulate the surface chemical environment of Si NCs, which provides a new way to control the physical properties of Si NCs.

Phosphorus (P) and Boron (B) co-doping effects at the nanoscale in Si nanocrystals/SiO2 multilayers have been studied in the present work. Several interesting experimental results are achieved which are in contrast to the case in bulk-Si and the previous observations on the doped Si nanocrystals. It is found that all the co-doping samples are n-type regardless of B doping ratios. The P doping efficiency in Si NCs is higher than B dopants, and it can be improved via B co-doping with suitable levels. Raman and ESR spectra indicate that the different occupation preferences of P and B in Si NCs are responsible for the interesting co-doping behaviors. It looks like that the electronic structures and the physical properties of Si NCs can be modulated via the impurities co-doping approach.