The spin Hall magnetoresistance (SMR) effect is studied in a magnetoelectric Cr2O3/heavy-metal W heterostructure. The Cr2O3 film is confirmed as the α-phase, and its Néel temperature is determined. A clear SMR behavior is observed at the interface of Cr2O3/W. A nearly 0.1% SMR ratio is achieved under a magnetic field of 9 T, which is larger than the reported value in the SrMnO3/Pt structure. A systematic study on the variations of SMR as functions of the magnetic field and its angle is performed. Our results indicate that the antiferromagnetic magnetoelectric Cr2O3/W structure has a promising prospect application in future spintronic devices.
We investigate the observation of negative spin Hall magnetoresistance (SMR) in antiferromagnetic Cr2O3/Ta bilayers at low temperature. The sign of the SMR signals is changed from positive to negative monotonously from 300 K to 50 K. The change of the signs for SMR is related with the competitions between the surface ferromagnetism and bulky antiferromagnetic of Cr2O3. The surface magnetizations of α-Cr2O3 (0001) is considered to be dominated at higher temperature, while the bulky antiferromagnetics gets to be robust with decreasing of temperature. The slopes of the abnormal Hall curves coincide with the signs of SMR, confirming variational interface magnetism of Cr2O3 at different temperature. From the observed SMR ratio under 3 T, the spin mixing conductance at Cr2O3/Ta interface is estimated to be 1.12 × 10 14 Ω -1 · m -2 , which is comparable to that of YIG/Pt structures and our early results of Cr2O3/W. (Appl. Phys.Lett. 110, 262401 (2017)) a) Electronic
Light‐emitting diodes based on perovskite quantum dots have attracted much attention since they can be applied in low‐cost display, biosensors, and other optoelectronic devices. Here, all‐inorganic light‐emitting diodes based on n‐type perovskite quantum dots/p‐Si heterojunction are fabricated. Both the green and the red light emission are achieved at room temperature. The output power density is 0.14 mW cm−2 for green light device and 0.25 mW cm−2 for the red one. The relatively low turn on voltage and high emission intensity in red light device can be attributed to the small hole injection barrier between CsPbI3 quantum dots and p‐Si. The emission drop off at high current density is observed under direct current (DC) driving mode, which is significantly improved by applying alternating current (AC) square pulses. The enhanced electroluminescence and the improved operation stability at high current density under AC driving mode can be attributed to the less thermal degradation and the reduced charge accumulation in the interface defect states due to the alternated biases. The results demonstrate the possibility of integrating the perovskite quantum dots with Si platform, which will be helpful to extend their actual applications.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.