Long-time air oxidation and oxide-substrate reactions on GaSb, GaAs and GaP at room temperature studied by X-ray photoelectron spectroscopy

Mizokawa, Yusuke; Komoda, Osamu; Miyase, Sunao

doi:10.1016/0040-6090(88)90288-x

Cited by 61 publications

(40 citation statements)

References 29 publications

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“…On other surfaces where M -M dimers are not present, M -O-P bonds should dominate. These conclusions are consistent with suggestions from several experiments on InP and GaP oxidation 23,24,26,[66][67][68][69] . However, we should note that for the (100) surface, M -O-M is an exclusively surface-adsorbed topology, whereas M -O-P features oxygen incorporated in the subsurface.…”

Section: Discussionsupporting

confidence: 82%

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Wood

Ogitsu

Schwegler

2012

The Journal of Chemical Physics

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We perform density-functional theory calculations on model surfaces to investigate the interplay between the morphology, electronic structure, and chemistry of oxygen-and hydroxyl-rich surfaces of InP(001) and GaP(001). Four dominant local oxygen topologies are identified based on the coordination environment: M -O-M and M -O-P bridges for the oxygen-decorated surface; and M -[OH]-M bridges and atop M -OH structures for the hydroxyl-decorated surface (M =In,Ga). Unique signatures in the electronic structure are linked to each of the bond topologies, defining a map to structural models that can be used to aid the interpretation of experimental probes of native oxide morphology. The M -O-M bridge can create a trap for hole carriers upon imposition of strain or chemical modification of the bonding environment of the M atoms, which may contribute to the observed photocorrosion of GaP/InP-based electrodes in photoelectrochemical cells. Our results suggest that a simplified model incorporating the dominant local bond topologies within an oxygen adlayer should reproduce the essential chemistry of complex oxygen-rich InP(001) or GaP(001) surfaces, representing a significant advantage from a modeling standpoint.

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Section: Discussionsupporting

confidence: 82%

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Wood

Ogitsu

Schwegler

2012

The Journal of Chemical Physics

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“…The N 2s peak was also present at around 18 eV, while the O 2s peak was absent. [39][40][41][42] On the other hand, a sharp, symmetric peak at 20.8 eV and a broad peak at around 23.5 eV originated from the Ga-O bonding and O 2s core levels after the oxidation process, respectively, indicating that the surface was covered with oxide. The relative intensity ratios of the O 1s and Ga 2p peaks in the survey spectra also reflected the oxidation of the surface.…”

Section: B Xps and -Aes Analyses On Processed N-gan Surfacementioning

confidence: 99%

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Shiozaki

Hashizume

2009

Journal of Applied Physics

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Surface control of n-GaN was performed by applying a photoelectrochemical oxidation method in a glycol solution to improve the optical and electronic characteristics. The fundamental properties of the oxidation were investigated. The oxidation, chemical composition, and bonding states were analyzed by x-ray photoelectron spectroscopy and micro-Auger electron spectroscopy, in which confirmed the formation of gallium oxide on the surface. The oxide formation rate was about 8 nm/min under UV illumination of 4 mW/ cm 2 . After establishing the basic properties for control of n-GaN oxidation, the surface control technique was applied to achieve low-damage etching, enhancement of the photoluminescence intensity, and selective passivation of the air-exposed sidewalls in an AlGaN/GaN high electron mobility transistor wire structure. The capacitance-voltage measurement revealed the minimum interface-state density between GaN and anodic oxide to be about 5 ϫ 10 11 cm −2 eV −1 , which is rather low value for compound semiconductors.

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“…There are also reports on both SiGe alloy and II-VI core fibers [18][19][20][21][22][23], one including low temperature photoluminescence [21]. However, there is limited information on III-V semiconductor-core fibers [26][27][28] manufactured by either CVD or molten-core techniques. InSb [24] and GaSb [25] fibers have been drawn using the molten-core approach, with crystallographic and compositional properties reported.…”

Section: Introductionmentioning

confidence: 99%

“…GaSb, which exhibits rapid oxidation, even at room temperature [27] but should be stabilized by encapsulation in glass, is of particular interest. In this paper, we report on the structure of, and photoluminescence from, GaSb-core fibers with relatively low oxygen content, both as-drawn and after CO 2 laser annealing.…”

Section: Introductionmentioning

confidence: 99%

Crystalline GaSb-core optical fibers with room-temperature photoluminescence

Song

Healy

Svendsen

et al. 2018

Opt. Mater. Express

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Glass-clad, GaSb-core fibers were drawn and subsequently laser annealed. The asdrawn fibers were found to be polycrystalline, possess Sb inclusions, and have oxide contamination concentrations of less than 3 at%. Melting and resolidifying regions in the cores using 10.6 µm CO 2 laser radiation yielded single crystalline zones with enhanced photoluminescence (PL), including the first observation of strong room temperature PL from a crystalline core fiber. Annealed fibers show low values of tensile strain and a bandgap close to that of bulk GaSb.

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Long-time air oxidation and oxide-substrate reactions on GaSb, GaAs and GaP at room temperature studied by X-ray photoelectron spectroscopy

Cited by 61 publications

References 29 publications

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Crystalline GaSb-core optical fibers with room-temperature photoluminescence

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