Molecular mechanism and key factors responsible for cytotoxicity against mycotoxin deoxynivalenol (DON) from Fusarium pathogens are rarely elucidated. In this study, rapid increases of ROS were first observed in human gastric epithelial (GES-1) cells under DON exposure. Mitochondrial DNA damage, impaired respiratory chain, and decreased oxygen consumption rate (OCR) values, as well as G2/M cell cycle arrest and apoptosis, were also detected. Via combinatorial approaches of a large-scale microarray of differentially expressed genes, high content and RNAi analysis, a transcription factor of Forkhead box O3 (FOXO3a) was found with crucial functionalities, regulated some apoptotic genes associated with mitochondrial toxicity and cell death after activation by nuclear translocation. Namely, knockdown of FOXO3a decreased the cytotoxicity of DON to GES-1 cells. Moreover, knockdown of the FOXO ortholog DAF16 in Caenorhabditis elegans increased the resistance to DON-induced cytotoxicity. Simultaneously, the signaling pathway of ROS/JNK/FOXO3a of DON-induced cytotoxicity was newly proposed. In total, FOXO3a via ROS/JNK/FOXO3a plays a critical role to function as negative regulator associating with DON-induced cytotoxicity, with the potential extending to other substances.
ZnO–Bi2O3–TiO2–Co2O3–MnO2‐based (ZBTCM) varistors were fabricated via the conventional solid‐state method, and the effect of SiO2 content on the phase transformation, microstructure, and electrical properties of the ZBTCM had been investigated. Results showed that this varistor can be sintered at a low temperature of 880°C with a high sintering density above 0.95 of the ZnO theoretical density. In these components, SiO2 acts as a controller in ZnO grain growth, decreasing the grain size of ZnO from 3.67 to 1.92 μm, which in turn results in an increase in breakdown voltage E1mA from 358.11 to 1080 V/mm. On the other hand, SiO2 has a significant influence on the defect structure and component distribution at grain‐boundary regions. When SiO2 content increases from 0 to 4 wt%, the value of the interface state density (Ns) increases sharply. At the same time, the electrical properties are improved gradually, and reach an optimized value with the nonlinear coefficient (α) up to 54.18, the barrier height (ϕb) up to 2.90 eV, and the leakage current (IL) down to 0.193 μA/cm2.
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