Subwavelength metallic slit arrays have been shown to exhibit extraordinary optical transmission, whereby tunnelling surface plasmonic waves constructively interfere to create large forward light propagation. The intricate balancing needed for this interference to occur allows for resonant transmission to be highly sensitive to changes in the environment. Here we demonstrate that extraordinary optical transmission resonance can be coupled to electrostatically tunable graphene plasmonic ribbons to create electrostatic modulation of mid-infrared light. Absorption in graphene plasmonic ribbons situated inside metallic slits can efficiently block the coupling channel for resonant transmission, leading to a suppression of transmission. Full-wave simulations predict a transmission modulation of 95.7% via this mechanism. Experimental measurements reveal a modulation efficiency of 28.6% in transmission at 1,397 cm−1, corresponding to a 2.67-fold improvement over transmission without a metallic slit array. This work paves the way for enhancing light modulation in graphene plasmonics by employing noble metal plasmonic structures.

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Excitonic effects account for a fundamental photoconversion and charge transport mechanism in Cu2O; hence, the universally adopted “free carrier” model substantially underestimates the photovoltaic efficiency for such devices. The quasi-equilibrium branching ratio between excitons and free carriers in Cu2O indicates that up to 28% of photogenerated carriers during photovoltaic operation are excitons. These large exciton densities were directly observed in photoluminescence and spectral response measurements. The results of a device physics simulation using a model that includes excitonic effects agree well with experimentally measured current–voltage characteristics of Cu2O-based photovoltaics. In the case of Cu2O, the free carrier model underestimates the efficiency of a Cu2O solar cell by as much as 1.9 absolute percent at room temperature.

The crystallographic orientation of a metal affects its surface energy and structure, and has profound implications for surface chemical reactions and interface engineering, which are important in areas ranging from optoelectronic device fabrication to catalysis. However, it can be very difficult and expensive to manufacture, orient, and cut single crystal metals along different crystallographic orientations, especially in the case of precious metals. One approach is to grow thin metal films epitaxially on dielectric substrates. In this work, we report on growth of Pt and Au films on MgO single crystal substrates of (100) and (110) surface orientation for use as epitaxial templates for thin film photovoltaic devices. We develop bias-assisted sputtering for deposition of oriented Pt and Au films with sub-nanometer roughness. We show that biasing the substrate decreases the substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 600 to 350 °C for Au, and from 750 to 550 °C for Pt, without use of transition metal seed layers. In addition, this temperature can be further reduced by reducing the growth rate. Biased deposition with varying substrate bias power and working pressure also enables control of the film morphology and surface roughness.

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The tunability of the Zn(O,S) conduction band edge makes it an ideal, earth-abundant heterojunction partner for Cu 2 O, whose low electron affinity has limited photovoltaic performance with most other heterojunction candidates. However, to date Cu 2 O/Zn(O,S) solar cells have exhibited photocurrents well below the entitled short-circuit current in the detailed balance limit. In this work, we examine the sources of photocurrent loss in Cu 2 O/Zn(O,S) solar cells fabricated by sputter deposition of Zn(O,S) on polycrystalline Cu 2 O substrates grown by thermal oxidation of Cu foils. X-ray photoelectron spectra reveal that Zn(O,S) deposited at room temperature leads to a thin layer of ZnSO 4 at the Zn(O,S)/Cu 2 O interface that impedes current collection and limits the short circuit current density to 2 mA/cm 2. Deposition of Zn(O,S) at elevated temperatures decreases the presence of interfacial ZnSO 4 and therefore the barrier to photocurrent collection. Optimal photovoltaic performance is achieved at a Zn(O,S) deposition temperature of 100 °C, which enables an increase in the short circuit current density to 5 mA/cm 2 , although a small ZnSO 4 layer is still present. Deposition at temperatures above 100 °C leads to a reduction in photovoltaic performance. Spectral response measurements indicate the presence of a barrier to photocurrent and exhibit a strong dependence on voltage and light bias, likely due to the photodoping of Zn(O,S) layer.

ZnSnxGe1−xN2 alloys are chemically miscible semiconductor compounds with potential application as earth-abundant alternatives to InxGa1−xN. Preparation of ZnSnxGe1−xN2 thin-films by reactive RF sputter deposition yield low-mobility, nanocrystalline films. In contrast, the growth of ZnSnxGe1−xN2 films by molecular-beam epitaxy (MBE) on c-plane sapphire and GaN templates is described herein. Epitaxial films exhibited 3D growth on sapphire and 2D single-crystal quality on GaN, exhibiting substantial improvements in epitaxy and crystallinity relative to nanocrystalline sputtered films. Films on sapphire were n-type with electronic mobilities as high as 18 cm2 V−1 s−1, an order of magnitude greater than the 2 cm2 V−1 s−1 average mobility observed in this work for sputtered films. Mobility differences potentially arise from strain or surface effects originating from growth techniques, or from differences in film thicknesses. In general, MBE growth has provided desired improvements in electronic mobility, epitaxy, and crystal quality that provide encouragement for the continued study of ZnSnxGe1−xN2 alloys.

This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractEpitaxial growth of cuprous oxide (Cu 2 O) has been achieved on (1 0 0) and (1 1 0) orientations of MgO by plasma-assisted molecular beam epitaxy. Growth was investigated using a pure oxygen plasma as well as a 90%Ar/10%O 2 plasma. Cu 2 O films grown using pure oxygen on MgO (1 0 0) have a limited growth window and typically exhibit multiple phases and orientations. Films grown on MgO (1 1 0) using pure oxygen are phase stable and predominantly (1 1 0) oriented, with some (2 0 0) orientation present. Films grown using an Ar/O 2 plasma on MgO (1 0 0) have improved phase stability and a single (1 1 0) orientation. Growth on MgO (1 1 0) using an Ar/O 2 plasma yields highly reproducible (1 1 0) oriented single phase Cu 2 O films with a much wider growth window, suggesting that this substrate orientation is preferable for Cu 2 O phase stability.