Single phase, single orientation Cu2O (1 0 0) and (1 1 0) thin films grown by plasma-assisted molecular beam epitaxy

Abstract

This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractEpitaxial growth of cuprous oxide (Cu 2 O) has been achieved on (1 0 0) and (1 1 0) orientations of MgO by plasma-assisted molecular beam epitaxy. Growth was investigated using a pure oxygen plasma as well as a 90%Ar/10%O 2 plasma. Cu 2 O films grown using pure oxygen on MgO (1 0 0) have a limited growth window and typically exhibit multiple phases and orientations. Films grown on MgO (1 1 0) using pure oxygen are phase stable and predominantly (1 1 0) oriented, with some (2 0 0) orientation present. Films grown using an Ar/O 2 plasma on MgO (1 0 0) have improved phase stability and a single (1 1 0) orientation. Growth on MgO (1 1 0) using an Ar/O 2 plasma yields highly reproducible (1 1 0) oriented single phase Cu 2 O films with a much wider growth window, suggesting that this substrate orientation is preferable for Cu 2 O phase stability.

Influence of substrate nature on the growth of copper oxide thin films

“…o is due to Cu 2 O(110) as confirmed from literature. [18] A characteristic XRD peak at 28 o was also observed for base Si(111) as shown in Fig. 2b.…”

Green synthesis of Cu x O nanoscale MOS capacitors processed at low temperatures

“…XRD spectra for films synthesized by Solution-1 and Solution-2 and annealed for 1hr at 200 o C are shown in Fig.2(a) proven by density functional theory calculations [26,27] that, under oxygen-rich conditions, Cu 2 O (110) has the lowest surface energy. Such oxygen-rich environment for this film was confirmed by the XPS measurement as we will show shortly.…”

Electrodeposition of cuprous oxide on a porous copper framework for an improved photoelectrochemical performance

“…The semiconductor cuprous oxide (Cu 2 O) has been shown to fulfill these criteria and is considered a promising candidate, which can be easily produced by inexpensive electrochemical [5][6][7] or thermal annealing [8] methods. Cu 2 O is a p-type semiconductor which has suitable band positions for PEC water splitting with the conduction band located 0.7 V more negative than the hydrogen evolution reaction (HER) potential [9] and a direct bandgap of *2.0-2.3 eV, depending on the fabrication process [10][11][12][13].…”