2017
DOI: 10.1016/j.solmat.2016.10.049
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Polycrystalline Cu2O photovoltaic devices incorporating Zn(O,S) window layers

Abstract: The tunability of the Zn(O,S) conduction band edge makes it an ideal, earth-abundant heterojunction partner for Cu 2 O, whose low electron affinity has limited photovoltaic performance with most other heterojunction candidates. However, to date Cu 2 O/Zn(O,S) solar cells have exhibited photocurrents well below the entitled short-circuit current in the detailed balance limit. In this work, we examine the sources of photocurrent loss in Cu 2 O/Zn(O,S) solar cells fabricated by sputter deposition of Zn(O,S) on po… Show more

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Cited by 26 publications
(7 citation statements)
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“…Previous studies of the ZnO/Cu 2 O heterojunction have indicated that a conduction band offset of 0.2–0.3 eV yields the highest open circuit voltage [8,9]. To lower the conduction band offset for the ZnO/Cu 2 O heterojunction solar cell there are several materials that can potentially be used as buffer layers, including Ga 2 O 3 (χ = 4.0 eV), TiO 2 (χ = 4.0 eV), ZnS (χ = 3.9 eV), GaN (χ = 3.5 eV), Ta 2 O 5 (3.2 eV), and various ZnO alloys [11,18,19]. Many of these materials have been implemented as buffer layer in experimentally realized ZnO/Cu 2 O heterojunction solar cells, but a relatively low performance has usually been achieved [7,20].…”
Section: Discussion On Heterojunction Interface Properties and Defmentioning
confidence: 99%
“…Previous studies of the ZnO/Cu 2 O heterojunction have indicated that a conduction band offset of 0.2–0.3 eV yields the highest open circuit voltage [8,9]. To lower the conduction band offset for the ZnO/Cu 2 O heterojunction solar cell there are several materials that can potentially be used as buffer layers, including Ga 2 O 3 (χ = 4.0 eV), TiO 2 (χ = 4.0 eV), ZnS (χ = 3.9 eV), GaN (χ = 3.5 eV), Ta 2 O 5 (3.2 eV), and various ZnO alloys [11,18,19]. Many of these materials have been implemented as buffer layer in experimentally realized ZnO/Cu 2 O heterojunction solar cells, but a relatively low performance has usually been achieved [7,20].…”
Section: Discussion On Heterojunction Interface Properties and Defmentioning
confidence: 99%
“…The electrochemical behavior of the electrodeposited Cu/ Cu 2 O foams onto the above well-cleaned copper rod surface was studied in 0.1 M KOH (Figure 1). All the electrodeposited Cu/Cu 2 O foams exhibited multiple redox peak couples corresponding to the transition between various copper oxidation states (e. g., Cu 2 O, CuO, Cu(OH) 2 and CuOOH). [40] During the positive-going potential scan, metallic Cu is first oxidized into Cu 2 O (~À 0.50 V, peak (a)).…”
Section: Materials and Electrochemical Characterizationmentioning
confidence: 99%
“…Copper-based catalysts have attracted significant interest over the years, [1][2][3] especially in the field of electrocatalysis, thanks to their high electro-catalytic activities, low cost, abundance and good electrical conductivities. [4][5][6] For instance, copper-based nanomaterials have been considered as promising electrocatalysts for potential applications including reduction of CO 2 , [7] water splitting, [8] fuel cells [9,10] and oxidation of several organic compounds such as methanol, [11] glycerol, [12] aliphatic diols and carbohydrates.…”
Section: Introductionmentioning
confidence: 99%
“…The electrical properties of the absorber (Cu 2 O) and buffer layer (ZnO) from the structure of the top subcell were analyzed using Silvaco Atlas software. The implementation of defects, as well as the study of two efficient materials (ZnO and Ga 2 O 3 ) for the buffer layer were investigated [13][14][15][16][17] and several analyses were considered using the Takiguchi model [7]. A transition interface defect layer (IDL) was introduced as well.…”
Section: Electrical Modeling and Simulation Results For The Two Subcementioning
confidence: 99%