In this work, we demonstrate abrupt, reversible switching of resistance in 1T-TaS2 using dc and pulsed sources, corresponding to an insulator-metal transition between the insulating Mott and equilibrium metallic states. This transition occurs at a constant critical resistivity of 7 mohm-cm regardless of temperature or bias conditions and the transition time is significantly smaller than abrupt transitions by avalanche breakdown in other small gap Mott insulating materials. Furthermore, this critical resistivity corresponds to a carrier density of 4.5 × 10(19) cm(-3), which compares well with the critical carrier density for the commensurate to nearly commensurate charge density wave transition. These results suggest that the transition is facilitated by a carrier driven collapse of the Mott gap in 1T-TaS2, which results in fast (3 ns) switching.

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Phase transitions in 2D materials can lead to massive changes in electronic properties that enable novel electronic devices. Tantalum disulfide (TaS), specifically the "1T" phase (1T-TaS), exhibits a phase transition based on the formation of commensurate charge density waves (CCDW) at 180 K. In this work, we investigate the impact of substrate choice on the phase transitions in ultrathin 1T-TaS. Doping and charge transfer from the substrate has little impact on CDW phase transitions. On the contrary, we demonstrated that substrate surface roughness is a primary extrinsic factor in CCDW transition temperature and hysteresis, where higher roughness leads to smaller transition hysteresis. Such roughness can be simulated via surface texturing of SiO/Si substrates, which controllably and reproducibly induces periodic strain in the 1T-TaS and thereby enables the potential for engineering CDW phase transitions.

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Sustainable ultrathin stretchable power sources have emerged with the development of wearable electronics. They obtain energy from living organisms and the environment to drive these wearable electronics. Here, an ultrathin stretchable and triboelectric nanogenerator (TENG) improved by chargeable carbon black (CB)/thermoplastic polyurethane (TPU) composite material (CT-TENG) is proposed for mechanical energy harvesting and physiological signal sensing. The CB/TPU composite can act as both a stretchable electrode and a triboelectric layer due to the coexistence of conductive CB and dielectric TPU. The CT-TENG demonstrates good stretchability (≈646%), ultrathin thickness (≈50 μm), and a lightweight (≈62 mg). The triboelectric electrode material can be improved by postcharging treatment. With the corona charging process, the output performance of the CT-TENG was improved eightfold and reached 41 V. Moreover, the CT-TENG with a self-powered sensing capability can inspect the amplitude and frequency of different physiological movements. Consequently, the CT-TENG is promising in promoting the development of electronic skins, wearable systems of self-powered sensors, human−machine interactions, soft robotics, and artificial intelligence applications.

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