Electrically Driven Reversible Insulator–Metal Phase Transition in 1T-TaS<sub>2</sub>

Hollander, Matthew J.; Liu, Yu; Lu, W. J.; Li, Li Jun; Sun, Yu; Robinson, Joshua A.; Datta, Suman

doi:10.1021/nl504662b

Cited by 151 publications

(192 citation statements)

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“…the in-plane field can suppress CCDW distortion as well. The suppressions of CCDW by the in-plane field are usually explained as electron injection effect [23,26]. However, according to our calculation, CCDW could be stable upon electron doping.…”

Section: Resultsmentioning

confidence: 55%

“…To demonstrate the pure electron doping effect on CDW, more direct doping experiments by negative perpendicular electric field or liquid-gated method should perform. Some works reported the suppression of CCDW by in-plane electric field [22][23][24][25][26]. By measuring the temperature dependence of resistivity (R − T ), Yoshida et al found the in-plane field cannot affect the NCCDW/ICCDW transition in R − T curve, but can introduce a metastable state with very low resistivity at low temperatures [24].…”

Section: Resultsmentioning

confidence: 99%

“…Yu et al reported a gate-controlled Li ion intercalation can suppress CCDW and introduce superconducivity [21]. Tsen et al [22], Hollander et al [23], Yoshida et al [24], and Mihailovic et al [25,26] reported the in-plane electric field induced transition from CCDW state to NCCDW or some metastable hidden state. Cho et al applied perpendicular electric pulse on 1T -TaS 2 and found positive electric pulse can introduce IC network to suppress Mott state at low temperature [27].…”

Section: Introductionmentioning

confidence: 99%

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Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Shao¹,

Xiao²,

Lu³

et al. 2016

Phys. Rev. B

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The transition metal dichalcogenide (TMD) 1T -TaS2 exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in 1T -TaS2. We investigate the charge doping effects on the electronic structures and phonon instabilities of 1T structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer 1T -TaS2, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with Tc of 6 ∼ 7 K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in 1T -TaS2, which makes the novel material have very promising applications in the future electronic devices.

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Section: Resultsmentioning

confidence: 55%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Shao¹,

Xiao²,

Lu³

et al. 2016

Phys. Rev. B

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“…Metastable phases of a CDW system are generally more susceptible to electronic perturbations, because CDWs directly couple to electric field (6)(7)(8)17). In our device, we observe that continuous current flow stabilizes the NC phase at low temperatures.…”

Section: Significancementioning

confidence: 99%

“…For device applications, it is desirable to control these phases by electrical means, but this capability is difficult to achieve in bulk crystals due to the high conduction electron density. Recent efforts to produce thin samples by mechanical exfoliation provide a new avenue for manipulating the CDWs in 1T-TaS 2 (4)(5)(6)(7)(8). These studies have demonstrated the suppression of CDW phase transitions using polar electrolytes, as well as resistive switching between the different phases.…”

mentioning

confidence: 99%

Structure and control of charge density waves in two-dimensional 1T-TaS ₂

Tsen

Hovden

Wang

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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231

259

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The layered transition metal dichalcogenides host a rich collection of charge density wave phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS 2 in the 2D limit. We first demonstrate that the intrinsic properties of atomically thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with transmission electron microscopy and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D.two-dimensional materials | strongly correlated systems | charge density waves L ayered 1T-TaS 2 exhibits a number of unique structural and electronic phases. At low temperature and ambient pressure, the ground state is a commensurate (C) charge density wave (CDW). On heating, it undergoes a sequence of first-order phase transitions to a nearly commensurate (NC) CDW at 225 K, to an incommensurate (IC) CDW at 355 K, and finally to a metallic phase at 545 K. Each transition involves both conduction electron and lattice degrees of freedom-large changes in electronic transport properties occur, concomitant with structural changes to the crystal. By either chemical doping or applying high pressures, it is possible to suppress the CDWs and induce superconductivity (1-3). For device applications, it is desirable to control these phases by electrical means, but this capability is difficult to achieve in bulk crystals due to the high conduction electron density. Recent efforts to produce thin samples by mechanical exfoliation provide a new avenue for manipulating the CDWs in 1T-TaS 2 (4-8). These studies have demonstrated the suppression of CDW phase transitions using polar electrolytes, as well as resistive switching between the different phases. As the material approaches the 2D limit, however, significant changes have been observed in the transport properties (4,5,8). However, the microscopic nature of the 2D state remains unclear. In this work, we use transmission electron microscopy (TEM) together with transport measurements to develop a systematic understanding of the CDW phases and phase transitions in ultrathin 1T-TaS 2 . We find that charge ordering disappears in flakes with few atomic layers due to surface oxidation. When samples are instead environmentally protected, the CDWs persist and their transitions can be carefully tuned by electric currents.Both the atomic and CDW structure of 1T-TaS 2 can be visualized in reciprocal space by TEM electron diffraction (9, 10). In Fig. 1A, we show diffraction images taken from a bulk-like, 50-nm-thick crystal at low and room tem...

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Electromagnetic Interference and Shielding

2021

Two‐Dimensional Materials for Electromagnetic Shielding

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Electrically Driven Reversible Insulator–Metal Phase Transition in 1T-TaS₂

Cited by 151 publications

References 20 publications

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Structure and control of charge density waves in two-dimensional 1T-TaS ₂

Electromagnetic Interference and Shielding

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Electrically Driven Reversible Insulator–Metal Phase Transition in 1T-TaS2

Cited by 151 publications

References 20 publications

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Structure and control of charge density waves in two-dimensional 1T-TaS 2

Electromagnetic Interference and Shielding

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Product

Resources

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Electrically Driven Reversible Insulator–Metal Phase Transition in 1T-TaS₂

Structure and control of charge density waves in two-dimensional 1T-TaS ₂