The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Kołasiński, Kurt W.; Barclay, William B.; Sun, Yu; Aindow, Mark

doi:10.1016/j.electacta.2015.01.162

Cited by 26 publications

(46 citation statements)

References 67 publications

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“…SiNWs fabricated by Dawood et al [18] have a longer length with the use of Au catalyst, while Lachiheb et al [19] have observed longer SiNWs for the Ag-etched samples. Recently, Kolasinski et al [20] have reported that the H 2 O 2 /HF etching solution is inherently not stable through the etching process, and does not well-behave kinetically with respect to the other oxidants such as V 2 O 5 . The difference in the observed etching rates for the Au and Ag catalysts is mostly related to the type of oxidant involved (H 2 O 2 ), while by using V 2 O 5 , no remarkable change is observed in the lengths of Au-and Ag-fabricated SiNWs.…”

Section: Structural Properties Of Silicon Nanowiresmentioning

confidence: 98%

Effects of silver and gold catalytic activities on the structural and optical properties of silicon nanowires

Lajvardi

Eshghi

Izadifard

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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Section: Structural Properties Of Silicon Nanowiresmentioning

confidence: 98%

Effects of silver and gold catalytic activities on the structural and optical properties of silicon nanowires

Lajvardi

Eshghi

Izadifard

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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“…[19][20][21] Unlike its counterparts, it can "cut through" all crystal planes selectively, [ 22 ] turning it into a good candidate for the development of an imprinting process. [26][27][28][29][30][31] Moreover, while pore formation in silicon can be obtained via MACE during the etching process, the range of pore morphologies is limited and often dependent upon the doping concentration and ratio of oxidizing to reducing species. [ 25 ] A large portion of MACE research focuses on understanding defect generation, namely pores that are created in the substrate, via fundamental studies.…”

Section: Introductionmentioning

confidence: 99%

Direct Imprinting of Porous Silicon via Metal‐Assisted Chemical Etching

Azeredo

Lin

Avagyan

et al. 2016

Adv Funct Materials

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2929wileyonlinelibrary.com drug delivery, [ 8,9 ] and biosensing [ 10,11 ] are derived from such integration. However, micro-and nanopatterning of PS has remained a challenge due to the inability of standard microfabrication processes (e.g., photolithography, wet and dry etching) to effectively pattern PS. [ 12 ] In this paper, we demonstrate a low-cost, low-stress, ambient and high-throughput chemical nanoimprint approach to patterning smooth 3D curvilinear PS surfaces in a single imprinting operation. As a demonstration of this process, sinusoidal and parabolic surfaces with potential uses as diffraction gratings and concentrators are fabricated to demonstrate potential onchip micro-optical components.Traditional approaches to patterning Si do not extend to PS because of the permeability and reactivity of the latter. During photolithography and micromachining, photoresist, developers, and etchants infi ltrate the pores, leading to contamination of the substrate, poor sidewall control and over-etching and, in general, poor fi delity of pattern transfer. [ 12,13 ] A simple route to bypass these issues is to perform lithography prior to anodization. The patterned photoresist fi lm is used as a mask during the anodization step leading to 2D embedded PS patterns with micron-scale resolution. [ 14 ] Cost-effective wet-etching processes such as KOH cannot selectively etch PS since multi ple crystal facets are exposed. Recipes for dry etching methods must be specifi cally tailored to a particular pore morphology of the PS being etched and high-aspect ratio features are seldom reported. [ 12 ] To circumvent these issues, micro-contact printing (MP), [ 15 ] dry-removal soft-lithography (DWSL), [ 16 ] and direct imprinting of PS (DIPS) [ 17,18 ] methods have been developed to pattern PS. The MP method uses a stamp that blocks diffusion of reactants during anodization of the silicon surface. As a result, it offers few degrees of freedom for 3D patterning and, thus, is limited to fabricating shallow corrugated patterns. The latter two patterning methods exploit the controlled fracturing or collapsing of the brittle porous material to selectively strip or compress PS. While DWSL is restricted to 2D patterning with microscale resolution, DIPS can generate 3D features with sub-100 nm resolution. DIPS relies on the compaction of PS leading to permanent deformation of the substrate and, thus, modifying spatially the porous morphology and the optical Conventional lithographical techniques used for bulk semiconductors produce dramatically poor results when used for micro and mesoporous materials such as porous silicon (PS). In this work, for the fi rst time, a high-throughput, single-step, direct imprinting process for PS not involving plastic deformation or high-temperature processing is reported. Based on the underlying mechanism of metal-assisted chemical etching (MACE), this process uses a pre-patterned polymer stamp coated with a noble metal catalyst to etch PS immersed in an HF-oxidizer mixture. The process not only overcome...

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“…Experiments (Kolasinski et al 2015) examining the rate and stoichiometry of metal-assisted catalytic etching have confirmed that both divalent and tetravalent etching pathways can contribute to etching. Etching in the presence of metal nanoparticles is accelerated to the point of being diffusion limited as expected from the consideration presented in Section 11.2.…”

Section: Catalytic Etch Chemistry and Mechanismsmentioning

confidence: 73%

“…The oxidant VO 2 + has a reduction potential of only 0.991 V. Therefore, it cannot dissolve Au and it can only lead to very low solubility of Pt when it is used as the oxidant. Nonetheless, VO 2 + can be used to induce both local and nonlocal etching with Ag, Au, and Pt (Kolasinski and Barclay 2013;Kolasinski et al 2015). In addition, both Ag and Au exhibit the same stoichiometry with approximately 2 moles of V(V) reduced and 1 mole of H 2 evolved for every mole of Si etched.…”

Section: Catalytic Etch Chemistry and Mechanismsmentioning

confidence: 98%

Optical Properties of Porous Silicon*

Lérondel¹

2016

Porous Silicon: From Formation to Application: Formation and Properties, Volume One

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The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Cited by 26 publications

References 67 publications

Effects of silver and gold catalytic activities on the structural and optical properties of silicon nanowires

Effects of silver and gold catalytic activities on the structural and optical properties of silicon nanowires

Direct Imprinting of Porous Silicon via Metal‐Assisted Chemical Etching

Optical Properties of Porous Silicon*

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