A new oxidation reaction at ultralow temperature (-30ºC) by bombardment of O 2 neutral beam can be enhanced at the extremely low activation energy, which can efficiently form a thin oxide film of all transition metal, such as platinum and ruthenium. Meanwhile, a novel neutral beam enhanced chemical etching for transition metals and magnetic materials was proposed without chemical and physical damages at ultralow temperature through Metallic Complex Reaction process. Highly anisotropic etching profile without both any sidewall re-deposition and damages on magnetic properties could be achieved just with a pure chemical reaction between ethanol and metallic oxide with low kinetic energy by neutral beam for the first time. This new etching technology has been considered as a breakthrough technology to develop next generation MRAM devices. IntroductionMagnetic random access memory (MRAM), which can offer similar performance to that of DRAM, higher density than SRAM, and faster speed and longer write endurance with nonvolatility than flash memory, might be suitable for replacement of numerous volatile and nonvolatile semiconductor memories that are currently in use. The etching technology of magnetic tunnel junction (MTJ) stack, which is composed of magnetic materials (nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe) etc.) and transition metals (ruthenium (Ru), platinum (Pt), tantalum (Ta) etc.), is the serious problem to limit the miniaturization of MRAM devices. Several methods have been applied as shown in Table I. Halogen-gas-based reactive ion etching (RIE) require a high temperature (>200°C) due to low vapor pressure, which causes thermal damages to magnetic properties, as well as post-corrosion generation. Conversely, the ion milling was limited by the several problems, such as miniaturization, sidewall re-deposition and physical sputtering damages due to the high energy [1][2][3].In this study, to overcome these processing problems, a damage-free and low temperature (-30°C) neutral beam etching technology [4, 5] without any halogen gases has been proposed for etching transition metals and magnetic materials through our newly proposed Metallic Complex Reaction process. Experimental Figure 1 shows a neutral beam enhanced chemical etching apparatus. Oxygen (O 2 ) and/or argon (Ar) gases are introduced into the plasma chamber, which excited by an inductively couples plasma (ICP) source, and then accelerated Ar + or O 2 + pass through the silicon aperture, and Ar, O 2 neutral beams are efficiently formed by maintaining the kinetic energy without any charge built-up. Then, the ethanol (C 2 H 5 OH or EtOH) gas directly injected into the process chamber without any dissociation in plasmas and directly absorbed on the material surface. Finally, the etching of these materials was investigated by combination of surface oxidation and Metallic Complex Reaction due to bombardment of Ar+O 2 neutral beams.
Results and discussionsAs Ta was widely used in MRAM as electrode, Ta etching was investigated through Metallic Complex...