2013
DOI: 10.1088/0022-3727/46/39/395203
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Non-porous ultra-low-kSiOCH (k= 2.3) for damage-free integration and Cu diffusion barrier

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Cited by 13 publications
(17 citation statements)
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“…Generally, in the PECVD process, precise control of molecular structure is difficult due to excess decomposition of material gas by plasma excitation. We have previously demonstrated the formation of a non-porous ultra-low-k SiOCH film with a sufficient film modulus [16] and conductive amorphous carbon (a-C:H) film at low temperature by NBECVD [17]. In particular, our conductive a-C:H film had the potential to be used as an electrode material for electrochemical measurements for Bio-LSI.…”
Section: Introductionmentioning
confidence: 96%
“…Generally, in the PECVD process, precise control of molecular structure is difficult due to excess decomposition of material gas by plasma excitation. We have previously demonstrated the formation of a non-porous ultra-low-k SiOCH film with a sufficient film modulus [16] and conductive amorphous carbon (a-C:H) film at low temperature by NBECVD [17]. In particular, our conductive a-C:H film had the potential to be used as an electrode material for electrochemical measurements for Bio-LSI.…”
Section: Introductionmentioning
confidence: 96%
“…Iacopi and Zenasni also showed that the combination of thermal activation and UV radiation promotes a selective bond rearrangement of the organosilicate glass matrix that induces an improvement of about 40% in elastic modulus and hardness value [ 46 , 47 ]. More interestingly, Kikuchi et al recently reported that a large-radius neutral-beam-enhanced chemical vapor deposition (NBECVD) process can be used to precisely control the film structure so as to produce a non-porous ultralow-k SiCOH with a relatively high modulus (>10 GPa) [ 48 ]. Since artificial pores were not formed by this method, the resulting film did not incur any damage from wet (acid or alkali) or oxygen plasma-based BEOL processes [ 48 ].…”
Section: Introductionmentioning
confidence: 99%
“…More interestingly, Kikuchi et al recently reported that a large-radius neutral-beam-enhanced chemical vapor deposition (NBECVD) process can be used to precisely control the film structure so as to produce a non-porous ultralow-k SiCOH with a relatively high modulus (>10 GPa) [ 48 ]. Since artificial pores were not formed by this method, the resulting film did not incur any damage from wet (acid or alkali) or oxygen plasma-based BEOL processes [ 48 ].…”
Section: Introductionmentioning
confidence: 99%
“…[10][11][12] It is now generally believed that the barrier effect is referable to the "cold wall effect" and "vessel wall effect" exerted by the specific structure of the material . [13] As for the study of the mechanism of blocking explosionproof effects, four types of methods are mainly applied, including blocking of flames, attenuation of explosion shock waves, changes in temperature and pressure, and numerical simulation. P.V.…”
Section: Introductionmentioning
confidence: 99%