The chemical etching characteristics of InGaAsP/InP double heterostructure (DH) wafers are studied through an SiO~ mask in the solutions of various etchant systems: (i) HC1, (ii) HCl:HNO3, (iii) HBr, (iv) Br2:CH3OH, and (v) H~SO4.The etching profiles produced in the (001) surface planes are examined by cleaving the DH wafer in orthogonal directions along the (110) and (110) planes. The profiles obtained depend on the type of etchant, its component proportion, and etching conditions. Various etching profiles, such as ordinary mesa shaped, reverse mesa shaped, and vertical walls, are formed by stripes being etched in the (001) planes of the DH wafer. The utility of these etching solutions is also discussed for a variety of InGaAsP/InP device applications.
Fabrication and characteristics of broader spectral width 1.3 μm and 1.5 μm InGaAsP superluminescent diodes having a novel stacked active layer (STAC-SLDs) structure are reported. The emission spectral width is successfully broadened as much as twice that of conventional SLDs, yielding spectral widths of 80 and 140 nm for the 1.3 μm and the 1.5 μm SLD, respectively.
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