Chemical Etching of InGaAsP / InP DH Wafer

Adachi, Sadao; Noguchi, Yoshio; Kawaguchi, Hitoshi

doi:10.1149/1.2124014

Cited by 49 publications

(36 citation statements)

References 39 publications

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“…The identified planes correspond to the crystallographic planes {lll}In and {112}In which are at angles of 54~ ' and 35~ ' in relation to the (001) plane, respectively. The planes {lll}In and {ll2}In are normally developed in the InP etching profiles due to the higher reactivity of the phosphorous atoms in comparison to indium in the {111} and {112} surface3 ~' 16,17 The etching profiles of InP are strongly affected by the concentration and composition of the etching solutions. We followed this effect by measuring the dimensions of the etching profile groove depth, P, and the underetching, U (half the difference between the opening in the photoresist, a, and the groove broadness, L).…”

Section: Resultsmentioning

confidence: 99%

A Quantitative Study of Chemical Etching of InP

Neves

Paoli

1993

J. Electrochem. Soc.

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Chemical etching of InP with HCI is used on a large scale, but limited information is available in the literature on the quantitative and mechanistic aspects of this reaction. A higher reaction rate is observed in alcoholic HCI than in aqueous HCI solutions. Also, a decrease of the reaction rate is observed with an increase in the degree of dissociation of HCI in aqueous solutions. We confirm that chemical etching depends on the concentration of nondissociated HCI molecules and that the reaction does not occur below a critical concentration. A first-order rate was obtained in aqueous and in alcoholic HCI solutions. The Arrhenius plot indicated an activation energy greater than 40 kJ . tool -I, indicating a kinetically controlled process. Scanning electron microscopy also showed profiles characteristic of a kinetically controlled process.There is great interest in the use of indium-phosphorus alloys in optoelectronic devices. During fabrication and quality control of these devices we must use robust and reproducible processes. Chemical etching is used in several steps during the production of such semiconductor devices. Although this technique has been applied since the beginning of this century, I it is our opinion that empiricism dominates and etching is still more art than science.Gerischer et al. 2.3 and Notten 4 have shown that the dissolution reaction of semiconductors may occur by a purely chemical mechanism. In such a case, the material surface suffers an attack by reactive solute molecules, as for example halogens and hydrogen halides. These are capable of forming, simultaneously, two new chemical bonds with the semiconductor surface. This concerted action distinguishes such a mechanism from the more usual electrochemical control. The reaction products are dissolved in the etching solution or escape as gases. We view the etching of InP with HC1 solutions as an example of this mechanism InPcs I + 3HCI(~q~ ---> InCl3(aql + PH3rThis work was carried out to contribute to the quantitative interpretation of the chemical processes occurring during etching of InP with HC1. ExperimentalThe crystals of InP used here were all from single batches of wafers. Samples were doped with Sn and, in some cases, with S. The crystalline orientation of the polished face of the wafers wa_s (001). After cutting small samples from the wafer, the (001) surface was submitted to a mechanochemical polishing with a 2 % bromine ethanolic solution at room temperature. Before each etching procedure the samples were extracted with trichloroethytene, acetone, and methanol in a quartz Soxhlet extractor for 10 min and subsequently washed with isopropanol, deionized water, and dried with a high purity nitrogen stream.To obtain the etching profiles we use a positive photoresist (Shipley S 1400-26) defining 5-~m wide lines by photolithography.All etching solutions were prepared by dilution of a 12M HC1 stock solution (standard 37% electronic reagent grade). The etching reactions were performed in a thermostated water bath (5 to 35 -+ 0. I~ in 15...

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Section: Resultsmentioning

confidence: 99%

A Quantitative Study of Chemical Etching of InP

Neves

Paoli

1993

J. Electrochem. Soc.

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“…After that, post-annealing was carried out at 200 °C while pressure from 1.0 to 6.1 MPa was applied. To leave the InP-based membrane layers on the SiO2 layer, the InP substrate side was mechanically polished and chemically etched using the InGaAs etch-stop layer [59]. Finally, the InGaAs etch-stop layer was chemically etched to obtain a 250-nm-thick MQW-DH on the SiO2 layer.…”

Section: Assessment Of Thermal Strain At Epitaxial Growth Temperaturementioning

confidence: 99%

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

et al. 2021

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The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

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“…RIE was chosen for etching because of its ability to produce vertical sidewalls. Wet chemical etching on InP was not an option because of its lattice orientation dependence (Adachi et al 1982). Wet etching produced ridges which suffered oscillating undercut and overcut as the lattice orientation changed along a curve in a waveguide.…”

Section: Waveguide Fabricationmentioning

confidence: 99%

Broadband arrayed waveguide gratings on InP

et al. 2007

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Broadband arrayed waveguide gratings on InP are presented using a novel S-shape design. This design was utilized to accommodate the large free spectral range required for broadband operation. Four and eight channel AWGs with a wavelength channel spacing of 18 nm are discussed. The output peaks of the AWGs have a wide FWHM of 11 nm which provides insensitive operation to polarization, temperature fluctuations, and chromatic dispersion.

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Chemical Etching of InGaAsP / InP DH Wafer

Cited by 49 publications

References 39 publications

A Quantitative Study of Chemical Etching of InP

A Quantitative Study of Chemical Etching of InP

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

Broadband arrayed waveguide gratings on InP

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