With the realization of faster telecommunication data rates and an expanding interest in ultrafast chemical and physical phenomena, it has become important to develop techniques that enable simple measurements of optical waveforms with subpicosecond resolution. State-of-the-art oscilloscopes with high-speed photodetectors provide single-shot waveform measurement with 30-ps resolution. Although multiple-shot sampling techniques can achieve few-picosecond resolution, single-shot measurements are necessary to analyse events that are rapidly varying in time, asynchronous, or may occur only once. Further improvements in single-shot resolution are challenging, owing to microelectronic bandwidth limitations. To overcome these limitations, researchers have looked towards all-optical techniques because of the large processing bandwidths that photonics allow. This has generated an explosion of interest in the integration of photonics on standard electronics platforms, which has spawned the field of silicon photonics and promises to enable the next generation of computer processing units and advances in high-bandwidth communications. For the success of silicon photonics in these areas, on-chip optical signal-processing for optical performance monitoring will prove critical. Beyond next-generation communications, silicon-compatible ultrafast metrology would be of great utility to many fundamental research fields, as evident from the scientific impact that ultrafast measurement techniques continue to make. Here, using time-to-frequency conversion via the nonlinear process of four-wave mixing on a silicon chip, we demonstrate a waveform measurement technology within a silicon-photonic platform. We measure optical waveforms with 220-fs resolution over lengths greater than 100 ps, which represent the largest record-length-to-resolution ratio (>450) of any single-shot-capable picosecond waveform measurement technique. Our implementation allows for single-shot measurements and uses only highly developed electronic and optical materials of complementary metal-oxide-semiconductor (CMOS)-compatible silicon-on-insulator technology and single-mode optical fibre. The mature silicon-on-insulator platform and the ability to integrate electronics with these CMOS-compatible photonics offer great promise to extend this technology into commonplace bench-top and chip-scale instruments.
We propose a new technique to realize an optical time lens for ultrafast temporal processing that is based on four-wave mixing in a silicon nanowaveguide. The demonstrated time lens produces more than 100 pi of phase shift, which is not readily achievable using electro-optic phase modulators. Using this method we demonstrate 20x magnification of a signal consisting of two 3 ps pulses, which allows for temporal measurements using a detector with a 20 GHz bandwidth. Our technique offers the capability of ultrafast temporal characterization and processing in a chip-scale device.
We demonstrate a single-shot technique for optical sampling based on temporal magnification using a silicon-chip time lens. We demonstrate the largest reported temporal magnification factor yet achieved (>500) and apply this technique to perform 1.3 TS/s single-shot sampling of ultrafast waveforms and to 80-Gb/s performance monitoring. This scheme offers the potential of developing a device that can transform GHz oscilloscopes into instruments capable of measuring signals with THz bandwidths.
Abstract-Four-wave mixing (FWM) in semiconductor optical amplifiers is an attractive mechanism for wavelength conversion in wavelength-division multiplexed (WDM) systems since it provides modulation format and bit rate transparency over wide tuning ranges. A series of systems experiments evaluating several aspects of the performance of these devices at bit rates of 2.5 and 10 Gb/s are presented. Included are single-channel conversion over 18 nm of shift at 10 Gb/s, multichannel conversion, and cascaded conversions. In addition time resolved spectral analysis of wavelength conversion is presented.
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