We fabricated a (110)-oriented vertical-cavity surface-emitting laser (VCSEL) with GaAs/AlGaAs quantum wells (QWs) and characterized the lasing properties of the VCSEL under optical spin injection. We demonstrated circularly polarized lasing at a high degree of circular polarization of 0.96 for our VCSEL at room temperature that originated from a long electron spin relaxation time of 0.7 ns in the (110) GaAs QWs despite a really small initial electron spin polarization of 0.04, which was well reproduced by using a rate equation analysis.
The chemical etching characteristics of
false(001false)normalInP
are studied through an
SiO2
mask in the solutions of various etching systems: (i)
normalHCl
, (ii)
normalHCl:HNO3
, (iii)
normalHBr
, (iv)
H2SO4:H2O2:H2O
, and (v)
Br2:CH3OH
. The etched depth is evaluated by using a calibrated optical microscope. The etching profiles are examined by cleaving the wafer in orthogonal directions along the (110) and (1̅10) planes. Various etching profiles, such as V‐shaped, reverse mesashaped ones, and nearly vertical walls, are formed by stripes being etched on the (001) planes. The indexes of the etch‐revealed planes are identified by making a comparison with the calculated angle between the (001) surface and etch‐side plane. The utility of these etching solutions is also discussed for a variety of
normalInP
device applications.
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The chemical etching characteristics of InGaAsP/InP double heterostructure (DH) wafers are studied through an SiO~ mask in the solutions of various etchant systems: (i) HC1, (ii) HCl:HNO3, (iii) HBr, (iv) Br2:CH3OH, and (v) H~SO4.The etching profiles produced in the (001) surface planes are examined by cleaving the DH wafer in orthogonal directions along the (110) and (110) planes. The profiles obtained depend on the type of etchant, its component proportion, and etching conditions. Various etching profiles, such as ordinary mesa shaped, reverse mesa shaped, and vertical walls, are formed by stripes being etched in the (001) planes of the DH wafer. The utility of these etching solutions is also discussed for a variety of InGaAsP/InP device applications.
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