1997
DOI: 10.1049/el:19971036
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Polarisation-insensitive travelling-wave electrode electroabsorption (TW-EA) modulator with bandwidth over 50 GHz and driving voltage less than 2 V

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Cited by 77 publications
(14 citation statements)
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“…However, designing the device as part of a 25-transmission line makes longer devices possible and packaging easier. Recently, a 200-m-long TW-EA device with a bandwidth over 54 GHz [105] and a 300-m-long device with a bandwidth of 25 GHz [104] were reported. Both devices were polarization insensitive and operated at 1.55 m. For 20-dB on/off ratio, drive voltage of the 200 and 300 m devices were 3 and 1.9 V, respectively.…”
Section: Traveling-wave Ea Modulatorsmentioning
confidence: 99%
“…However, designing the device as part of a 25-transmission line makes longer devices possible and packaging easier. Recently, a 200-m-long TW-EA device with a bandwidth over 54 GHz [105] and a 300-m-long device with a bandwidth of 25 GHz [104] were reported. Both devices were polarization insensitive and operated at 1.55 m. For 20-dB on/off ratio, drive voltage of the 200 and 300 m devices were 3 and 1.9 V, respectively.…”
Section: Traveling-wave Ea Modulatorsmentioning
confidence: 99%
“…To overcome the tradeoff between bandwidth and device length, EAMs with traveling-wave (TW) electrodes were developed [9]- [15], where the bandwidth is not limited by lumped RC and the device length can be longer with a higher bandwidth. A typical implementation is illustrated schematically in Fig.…”
Section: Tw Eams and Their Unique Propertiesmentioning
confidence: 99%
“…Toward the high performance in the EAM application, traveling-wave (TW) structure is one of candidates to overcome the conventional RC-lump limitation. Therefore, the waveguide can be made long to enhance the extinction ratio and high modulation efficiency without losing its high-speed performance (Kawano et al 1997;Zhang et al 1999;Li et al 1999;Lewén et al 2003). However, in practical, the limitation of TWEAM in p-i-n layers is generally restricted by the high microwave propagation loss because of the metal skin effect, highly loaded capacitance and the high resistance in p-layer (Giboney et al 1996).…”
Section: Introductionmentioning
confidence: 99%