GaInAsP lateral current injection lasers on semi-insulating substrates

Oe, Kunishige; Noguchi, Yoshio; Caneau, C.

doi:10.1109/68.281801

Cited by 79 publications

(39 citation statements)

References 3 publications

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“…Although the LCI LD design has already been proposed in the literature to be used as longer wavelength active sources in optoelectronic integrated circuits using GaInAsP/InP and related material systems [10], this article presents the first theoretical demonstration that this approach is also feasible for UV LDs operating at sub-300 nm wavelengths in the III-V nitride material system.…”

Section: Introductionmentioning

confidence: 98%

AlGaN-Based Lateral Current Injection Laser Diodes Using Regrown Ohmic Contacts

Satter

Lochner

Ryou

et al. 2013

IEEE Photon. Technol. Lett.

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A lateral current injection (LCI) design for AlGaN deep-ultraviolet edge-emitting laser diodes (LDs) on AlN substrates is presented. Two-dimensional optoelectronic simulation predicts lasing at a wavelength of 290 nm. Unlike vertical current injection designs, LCI designs can take advantage of narrow-bandgap p-type contact layers with minimal impact on the optical confinement factor through a partial decoupling of the problems of optical confinement and electrical injection. With polarization-charge-matched quantum well barriers, a large number of quantum wells can be used in LCI designs, which not only enhances the optical confinement factor but also distributes joule heating over a large volume. This is the first theoretical investigation of an LCI LD design in the III-V nitride material system.Index Terms-AlGaN active layer, AlN substrate, deep ultraviolet laser diodes, lateral current injection, polarization charge, quaternary barrier, regrown ohmic contacts.

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Section: Introductionmentioning

confidence: 98%

AlGaN-Based Lateral Current Injection Laser Diodes Using Regrown Ohmic Contacts

Satter

Lochner

Ryou

et al. 2013

IEEE Photon. Technol. Lett.

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“…Several InP-based LCI lasers have reported [1][2][3][4] . Recently, we have used thermal diffusion and ion implantation to realize lateralcurrent-injection photonic crystal lasers 5 and a DFB laser 6 .…”

Section: Introductionmentioning

confidence: 99%

50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser

Hasebe

Sato

Takeda

et al. 2014

2014 the European Conference on Optical Communication (ECOC)

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“…Previously, we have reported an optically pumped membrane DFB laser with low threshold pump power of 0.34 m W [3]. In addition, an electrically pumped membrane DFB laser with threshold current of II rnA was demonstrated by introducing a lateral-current-injection (LCI) structure [4,5].…”

Section: Introductionmentioning

confidence: 99%

Thermal analysis of self-heating effect in GaInAsP/InP membrane DFB laser on Si substrate

Doi

Shindo

Futami

et al. 2012

IEEE Photonics Conference 2012

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Toward realization of an ultra-low-power-consumption semiconductor light source for on-chip optical interconnection, thermal characteristics of a membrane DFB laser were theoretically investigated. From numerical analysis, the thermal resistance of the membrane laser was estimated to be 6100 KIW, which does not affect to lasing characteristics of the membrane DFB laser due to low power operation capability.

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GaInAsP lateral current injection lasers on semi-insulating substrates

Cited by 79 publications

References 3 publications

AlGaN-Based Lateral Current Injection Laser Diodes Using Regrown Ohmic Contacts

AlGaN-Based Lateral Current Injection Laser Diodes Using Regrown Ohmic Contacts

50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser

Thermal analysis of self-heating effect in GaInAsP/InP membrane DFB laser on Si substrate

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