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The vacancy-enhanced rapid diffusion of N-type dopants especially phosphorus has been a hurdle for the development of germanium based complementary metal-oxide-semiconductor (CMOS) technology. Phosphorus diffuses quickly in germanium via the formation of Phosphorus-Vacancy (P-V) pairs. Trapping vacancies thus slowing down the rapid P diffusion by some elements like carbon, nitrogen and fluorine has proved to be effective. In this work, the junction control by carbon and P co-implantation in pre-amorphized germanium is investigated systematically. It is found that when the implanted C sits at the half range of the pre-amorphized germanium layer, the vacancy-enhanced diffusion of phosphorus and the resultant junction depth can be well controlled.

Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed, which is grown by a horizontal hot-wall chemical vapor deposition reactor. By microwave photoconductivity decay lifetime measurements and photoluminescence measurements, the results show that the average carrier lifetime of as-grown epilayer across the whole wafer is 2.59 μs, while it is no more than 1.34 μs near a triangle defect (TD). The scanning transmission electron microscope results show that the triangle structure defects have originated from 3C-SiC polytype and various types of as-grown stacking faults. Compared with the as-grown stacking faults, the 3C-SiC polytype has a great impact on the lifetime. The reduction of TD is essential to increasing the carrier lifetime of the as-grown thick epilayer.

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