Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

Yan, Guangwu; Feng, Zhaochi; Niu, Yingxi; Yang, Fei; Liu, Xingfang; Wang, Lei; Zhao, Wei; Sun, Guang–Zhen; Zeng, Yiping

doi:10.1016/j.apsusc.2015.06.172

Cited by 7 publications

(2 citation statements)

References 31 publications

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“…The interreaction between hydrogen atoms and silicon carbide during the annealing process is quite complex, [28,29] which could generate Si-H, C-H, [30] Al-H complex, [31] and V C -H complex. [32] The effects of 10-20 min hydrogen annealing on increasing the minority carrier lifetimes were basically independent of the annealing time, according to OKUDA who stated that the unknown deep level defects were passivated by hydrogen atoms in p-type SiC epilayers during hydrogen annealing.…”

Section: Hydrogen Annealingmentioning

confidence: 99%

Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation

et al. 2023

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Thermal oxidation and hydrogen annealing were applied on a 100 μm thick Al-doped p-type 4H-SiC epitaxial wafer to modulate the minority carrier lifetime, which was investigated by microwave photoconductive decay (μ-PCD). The minority carrier lifetime decreased after each thermal oxidation. On the contrary, with the hydrogen annealing time increasing to 3 hours, the minority carrier lifetime increased from 1.1 μs (as-grown) to 3.14 μs and then saturated after the annealing time reached 4 hours. The increase of surface roughness from 0.236 nm to 0.316 nm may also be one of the reasons for limiting the further improvement of minority carrier lifetimes. Moreover, the whole wafer mappings of minority carrier lifetimes before and after hydrogen annealing were measured and discussed. The average minority carrier lifetime was up to 1.94 μs and non-uniformity of carrier lifetime reached 38 % after 4-hours hydrogen annealing. The increasing minority carrier lifetimes could be attributed to the double mechanisms of excess carbon atoms diffusion caused by selective etching of Si atoms and passivation of deep-level defects by hydrogen atoms.

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Section: Hydrogen Annealingmentioning

confidence: 99%

Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation

et al. 2023

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“…9 Growth of 3C-SiC films on Si substrates is usually conducted in conventional chemical vapor deposition equipment (c-CVD). 10,11 Generally, silicon wafer is placed on the surface of a graphite susceptor in the c-CVD chamber for 3C-SiC growth. 12 In this growth configuration, 3C-SiC film is grown on the up surface of silicon substrate but not on the down surface which closely contacts susceptor.…”

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confidence: 99%

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Liu

Guo

Shen

et al. 2016

ECS J. Solid State Sci. Technol.

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Although epitaxial growth of Si films on both surfaces of silicon wafer (epi-Si/Si-wafer/epi-Si) can be realized in foundry by means of mounting certain amounts of silicon wafers in a boat in commercial specialized chemical vapor deposition equipment (s-CVD), for its counterpart epi-SiC/Si-wafer/epi-SiC, neither is it readily realized in s-CVD, nor is it easily achieved in conventional chemical vapor deposition equipment (c-CVD) which is generally used for growth of 3C-SiC on single surface of silicon wafer (epi-SiC/Si-wafer). Since the growth of epi-SiC/Si-wafer/epi-SiC in one run is more efficient, and is anticipated, in this work, we demonstrated a facile method for growth of epi-SiC/Si-wafer/epi-SiC in c-CVD. The Si wafer was double-side polished and mounted in a suspension mode on the susceptor in the c-CVD chamber. It was found that homogeneous 3C-SiC(100) films were heteroepitaxially grown on both surfaces of the suspended Si(100) wafer simultaneously. The structural and electrical properties of the obtained 3C-SiC films on both surfaces were investigated by means of SEM, XRD, Raman and J-V measurements. Results showed that each film was uniform and continuous, with same trend of slight degradation from the inner to the outer region of the wafer. This indicated a possible way of making mass production of high quality 3C-SiC films on Si wafers in one run in c-CVD for the potential applications such as sensors, with working principle based on voltage drop difference of two back-to-back diodes on epi-SiC/Si-wafer/epi-SiC, or graphene growth from epi-SiC/Si-wafer/epi-SiC templates.

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Growth mechanism and ablation behavior of CVD-HfC coating on the surface of C/C composites and CVD-SiC coating

Zhang

et al. 2021

Corrosion Science

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Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

Cited by 7 publications

References 31 publications

Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation

Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Growth mechanism and ablation behavior of CVD-HfC coating on the surface of C/C composites and CVD-SiC coating

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