Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

Yuan, Hao; Tang, Xiaoyan; Song, Qi; Zhang, Yimen; Zhang, Yuming; Yang, Fei; Niu, Yingxi

doi:10.1016/j.sse.2014.10.004

Cited by 6 publications

(5 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the thickness of the epitaxial layer is selected as 30 µm, and N D should be redesigned for the FJ device. Based on our previous work [10], Figure 2 However, it is obvious that there is a very large difference in the BV distribution between the FJ and conventional device structures, as shown in Figure 2(b). BV exhibits an inflection point when N D is approximately 7.5 × 10 15 cm −3 .…”

Section: B Design Of the Epitaxial Layer For The Fj_jbsmentioning

confidence: 77%

“…Therefore, it is known that the depletion layer in the epitaxial layer first extends from the surface to the FJ structure with the reverse voltage rising. Combined with our previous work [10], there are also three cases for the electric field distribution with different N D values (assuming that the thickness of the epitaxial layer is constant and the FJ structure is located in the middle of the epitaxial layer), as shown in Figure 1(b).…”

Section: ) Case 2 (Critical State): Withmentioning

confidence: 83%

See 1 more Smart Citation

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

et al. 2020

Self Cite

View full text Add to dashboard Cite

This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30µm, 6×10 15 cm −3-doped epitaxial layer. Extensive simulations have been performed to design, optimize and analyze the structure of the FJ_JBS rectifier. The fabricated FJ_JBS shows that breakdown voltage (BV) and differential R on,sp are 3.4 kV, yielding the highest BV value reported for 4H-SiC FJ diodes, and 5.67 m •cm 2 , respectively. Compared with the conventional JBS, the BV value of FJ_JBS increases by 33.3% and the R on,sp only slightly rises by 6.2%. The corresponding Baliga figure-of-merit (BFOM) (4 BV 2 /R on−sp) of this FJ_JBS diode is 8.16 GW/cm 2. INDEX TERMS 4H-SiC, FJ structure, JTE termination, FJ_JBS.

show abstract

Section: B Design Of the Epitaxial Layer For The Fj_jbsmentioning

confidence: 77%

Section: ) Case 2 (Critical State): Withmentioning

confidence: 83%

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…By comparing equations (11)- (15) and equations ( 21)-( 23), it is apparent that these inertia weight factors m 1 , m 2 , m 3 and m 4 remain the same in these two expression sets. It is determined by the physics of the abrupt parallel plane P-N junction.…”

Section: Pt Structurementioning

confidence: 99%

“…For a fixed BV, there are many combinations of W D,PT and N D . Using equation (18) in equation (17) and combining equations ( 13) and (15) give ´-…”

Section: Pt Structurementioning

confidence: 99%

“…This dissipated power limits the current-handling capability of the device as well as the efficiency of the whole system. So the relation between the specific on-resistance and the breakdown voltage is a great concern in device design and parameter selection for the epitaxial layer [9][10][11][12][13][14][15][16][17][18]. Thanks to the Fulop model [1], i.e.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Expression set for epitaxial layer design in power MOSFET

Jin

Feng

Chen

2018

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this work, the reason for the difference between the simulated and experimental breakdown voltage is confirmed in power MOSFETs. Theoretical study predicts two factors. One is that the recombination phenomenon is ignored in the simulation. Another problem is that the accuracies of commonly used impact ionization models are not qualified. The widely used impact ionization models, which are the key factor to influence the breakdown voltage, are analyzed theoretically and numerically. Meanwhile, the validities of these models are verified experimentally. It is proved that the Lackner model is more precise. With the help of qualifying and with the recombination phenomenon considered, the conventional ionization integral is modified. The relations between the breakdown voltage, the specific on-resistance, the thickness and the doping concentration of the epitaxial layer are then simulated and fitted to the non-punch-through (NPT) structure. While the breakdown voltage of the NPT structure using the Lackner model varies from 182 V to 1471 V, the value using the Chynoweth model, which is in common use in simulation, is underestimated by 6.0%(171 V) to 9.5%(1332 V). Based on these improvements, an expression set is presented for the epitaxial layer parameters selection. The re-established formula set has more accuracy and obvious difference from the results obtained with the conventional Chynoweth models. For optimum designed punch-though (PT) structures, the analytical results indicate that the specific on-resistance can be reduced by about 12.0% compared with the NPT structure. The PT structure also allows the epitaxial layer to be decreased by about 25.3% in thickness and 8.3% in doping concentration.

show abstract

Analytical model and optimization strategy for SiC floating junction JBS diodes

Yuan

Bai

et al. 2023

Microelectronics Journal

View full text Add to dashboard Cite

Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

Cited by 6 publications

References 11 publications

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

Expression set for epitaxial layer design in power MOSFET

Analytical model and optimization strategy for SiC floating junction JBS diodes

Contact Info

Product

Resources

About