Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching

Liu, X.F.; Guo, Yan; Sang, Ling; Niu, Yingxi; He, Yuan; Shen, Zhenxi; Wen, Zheng; Chen, J.; Zhao, Weiyao; Wang, L.; Guan, Min; Feng, Zhaochi; Sun, G.S.; Zeng, Yi

doi:10.1016/j.jcrysgro.2019.125359

Cited by 5 publications

(3 citation statements)

References 17 publications

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“…Therefore, it is vital to reduce defects through the optimization of SiC single crystal growth techniques and corresponding key parameters. [27] ; (b) Nomarski optical microscope images of KOH etching pits TSD, TED and BPD in a 4H-SiC single crystal substrate (off axis 4°) [28] ; (c) top view of solvent inclusions [29] ; (d) OM images of polytypes on 4H substrate [30] ; (e) TEM image of an SF [31] ; (f) metallographic microscope of MP [32] (a) (b)…”

Section: Defectsmentioning

confidence: 99%

“…For solution growth of SiC single crystal, the Si source stems from highly pure Si melt while the graphite crucible serves dual purposes: heater and C solute source. SiC single crystals are more likely to grow under the ideal stoichiometric ratio when the ratio of C and Si is close to 1, indicating a lower defect density [28] . However, at atmospheric pressure, SiC shows no melting point and decomposes directly via vaporization at temperatures exceeding around 2,000 °C.…”

Section: Special Reviewmentioning

confidence: 99%

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Review of solution growth techniques for 4H-SiC single crystal

Liang

Qian

et al. 2023

China Foundry

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The third-generation semiconductor silicon carbide (SiC) has the characteristics of the wide band gap, high electric breakdown voltage, large saturated drift velocity, and high thermal conductivity, which are favorable for power devices under high-voltage, high temperature, and high-frequency scenarios [1,2] . Automotive applications are expected to remain a primary market for SiC power segments since they are one of the main drivers of the total power electronics market. The overall market for SiC devices is expected to exceed US$2.5 billion by 2025, with a compound annual

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Section: Defectsmentioning

confidence: 99%

Section: Special Reviewmentioning

confidence: 99%

Review of solution growth techniques for 4H-SiC single crystal

Liang

Qian

et al. 2023

China Foundry

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show abstract

“…The preferential etching processes of TEDs and TSDs proceed along the dislocation lines and dislocation steps, which create hexagonal pits at the surface of molten-KOH etched 4H-SiC. The average size of the etch pits of TSDs is about two times larger than that of TEDs [107,108]. The preferential etching of BPDs in off-axis sliced 4H-SiC starts at the outcrop at the surface, and proceeds along the dislocation line of a BPD, which creates the sea-shell shaped etch pit [109,110].…”

Section: Etch Pits Of Dislocations In 4h-sic Wafersmentioning

confidence: 99%

Dislocations in 4H silicon carbide

Li¹,

Zhang²,

Liu³

et al. 2022

J. Phys. D: Appl. Phys.

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Owning to the superior properties of the wide bandgap, high carrier mobility, high thermal conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for the applications of electrical vehicles, 5G communications and new-energy systems. Although the industrialization of 150 mm 4H-SiC substrates and epitaxial layers has been successfully achieved, the existence of high density of dislocations is one of the most important bottlenecks for advancing the device performance and reliability of 4H-SiC based high-power and high-frequency electronics. In this topical review, the classification and basic properties of dislocations in 4H-SiC wafers and epitaxial layers are introduced. The generation, evolution and annihilation of dislocations during the single-crystals growth of 4H-SiC boules, the processing of 4H-SiC wafers, as well as the homoepitaxy of 4H-SiC layers are systematically reviewed. The characterization and discrimination of dislocations in 4H-SiC are presented. The effect of dislocations on the electronic and optical properties of 4H-SiC wafers and epitaxial layers, as well as the role of dislocations on the device performance and reliability are finally presented. This topical review provides insight into the fundamentals and evolution of dislocations in 4H-SiC, and is expected to provide inspiration for further manipulation of dislocations in 4H-SiC.

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Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction

Long

Ren

Guo

et al. 2020

Journal of Applied Physics

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Power electronic devices for high-voltage applications prefer wide-bandgap semiconductors such as silicon carbide, whereas the immaturity of epitaxial growth technology introduces many extended defects, some of which are crucial to the electrical performance of fabricated devices. Therefore, it is much expected to find out some deep relation between extended defects and device performance. In this work, based on comparisons of breakdown behaviors of 4H-SiC power diodes with or without extended defects of different types, the importance of several features of the extended defect, including the distance, length, and orientation, is reported. Besides, based on the experimental results from dark-field microscopy, near-ultra-violet photoluminescence and topography, and theoretical analysis with numerical calculations, the mechanism of a particular asymmetric breakdown behavior in 4H-SiC devices along the step-flow direction is revealed, which originates from the prevalent step-controlled epitaxy technology for the commercial 4H-SiC epitaxial wafer. With the proposed result and understanding, it is possible to achieve a higher yield in production at a similar material cost.

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Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching

Cited by 5 publications

References 17 publications

Review of solution growth techniques for 4H-SiC single crystal

Review of solution growth techniques for 4H-SiC single crystal

Dislocations in 4H silicon carbide

Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction

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