“…Among the morphological defects, micropipes have serious impact on the device performance but are preventable, since the substrates with micropipe density less than 0.1 cm −2 are commercially available [16][17][18]. In our previous paper, we reported the density of other morphological defects in a 4-inch 4H-SiC epitaxial wafer, as well as their probability of causing Schottky diode power device failure [19]. The average morphological defect (including TDs, downfalls, particles, carrots) density in the 4-inch 4H-SiC epitaxial layers is 1.25 cm −2 , in which the TDs, the downfalls, the particles, and the carrots account for approximately 60%, 2%, 31% and 7%, Micromachines 2020, 11, 609 2 of 13 respectively.…”