Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Li, Jinlan; Meng, Chenxu; Yu, Le; Li, Yun; Yan, Feng; Han, Ping; Ji, Xiaoli

doi:10.3390/mi11060609

Cited by 10 publications

(3 citation statements)

References 51 publications

(55 reference statements)

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“…In Schottky barrier diode, BPDs, TSDs and TEDs increase the reverse leakage current [97][98][99][100][101] while micropipes and SFs reduce the blocking voltage [85,89,102]. Carrots and polytype inclusions both reduce blocking voltage and increase leakage current while scratches cause barrier height inhomogeneity [103].…”

Section: Impact Of Defects On Devicesmentioning

confidence: 99%

Defect Inspection Techniques in SiC

et al. 2022

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With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

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Section: Impact Of Defects On Devicesmentioning

confidence: 99%

Defect Inspection Techniques in SiC

et al. 2022

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“…With the continuous development of power devices, the large size of 4H-SiC epitaxial wafers has become the main way for manufacturers to reduce costs, improve device productivity and improve device performance [23]. The performance of power devices depends to a large extent on the quality of 4H-SiC epitaxial wafers [24,25], so the homoepitaxial growth of 4H-SiC is critical for the fabrication of 4H-SiC power devices. However, the process parameters of large-size 4H-SiC epitaxial wafers and small-size epitaxial wafers are not exactly the same, which undoubtedly increases the technical difficulty of growing large-size epitaxial wafers.…”

Section: Introductionmentioning

confidence: 99%

Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions

et al. 2022

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Wide band gap semiconductor 4H-SiC is currently widely used in the manufacture of high-frequency and high-voltage power devices. The size of commercial 4H-SiC wafers is increasing, from 4 inches to 6 inches. Surface roughness, as one of the parameters reflecting the quality of epitaxial wafers, is closely related to the performance of power devices. Most studies on the uniformity of epitaxial layers did not focus on RMS; however, the uniformity of epitaxial surface roughness also affects the device yield. In this paper, the root mean square roughness (RMS) and uniformity (σ) of epitaxial wafers are investigated as a function of epitaxy conditions, including C/Si ratio, growth temperature, and Si/H ratio. It was found that the best values of RMS and σ were obtained with C/Si ratio = 1 in the experimental range. Growth temperature had opposite effects on RMS and σ, with better RMS uniformity obtained at lower growth temperatures. An insignificant effect on RMS and σ has been found with the Si/H ratio changes in the experimental range. We hope that our experiments can play a certain role in promoting the improvement of the surface roughness of wafer-scale 4H-SiC epitaxial layers.

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“…Moving our attention onto the characterization of materials to be employed for the realization of Si-based photodetectors, J. Li et al investigate how different chemical vapor deposition (CVD) growth conditions impact the defect density of 4H-SiC epilayers and the performance of Nickel(Ni)/4H-SiC Shottky PDs [ 11 ]. In this work, particular attention was paid to triangular defects (TDs) and deep level defects, Z 1/2 , showing that, while the C/Si ratio strongly impacts the formation of TDs, no correlation with the deep level defect, Z 1/2 , can be confirmed.…”

mentioning

confidence: 99%