Our Monte Carlo model shows that the incorporation of multiple transit regions into a single Gunn device is a feasible means of increasing the output power of the device. From our simulations, the power attainable from these multiple-transit-region Gunn diodes increases linearly with the square of the number of transit regions, while the efficiency remains approximately the same. We have found that the coherent transfer of domains occurs in all the investigated devices (up to eight transit regions). There seems to be no obvious upper limit to the number of transit regions that can be incorporated into a single device (in the absence of thermal limitations).
A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.
We report the first epitaxially grown, double transit region Gunn diode oscillator. The prototype device was operated at its second harmonic of 77 GHz, giving an RF output power of 64 mW as compared with 54 mW from the corresponding single transit region device. Measurements of threshold and breakdown voltage and of RF power support the interpretation of coherent nucleation of Gunn domains in the two transit regions and the satisfactory operation of the device.
A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 µm diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.
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