Monte Carlo modelling of multiple transit regions Gunn diodes

Teoh, Yi-Hong; Dunn, G. M.

doi:10.1049/el:20020534

Cited by 3 publications

(1 citation statement)

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“…Efficienc enhancements, with such N 2 scaling, have been predicted for GaAs Gunn diodes. 39 Here, we provide a quantitative evaluation for multidomain wurtzite GaN diodes using the Monte Carlo simulation approach.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Joshi

Sridhara

Shah

et al. 2003

Journal of Applied Physics

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studies of transferred electron oscillators based on bulk wurtzite GaN are presented. Two structures have been examined: ͑i͒ devices with the conventional single notch structure, and ͑ii͒ repetitive structures with serial segments to fashion a ''multiple domain'' device. Wurtzite material has been chosen because of the higher drift velocity and because analytical expressions for the band structure have recently become available. Performance parameters of interest such as the operating frequency, output power, and conversion efficienc are calculated. Variations due to changes in temperature, biasing voltage, and device length are also included. It is shown that multidomain Gunn diodes can lead to significan improvements in output power over conventional, single-transit structure, and so such multiple GaN diodes merit serious experimental study.

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Section: Introductionmentioning

confidence: 99%