Monte Carlo modelling of multiple-transit-region Gunn diodes

Teoh, Yi-Hong; Dunn, G. M.; Priestley, N.; Carr, M.

doi:10.1088/0268-1242/17/10/310

Cited by 14 publications

(13 citation statements)

References 12 publications

(14 reference statements)

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“…where T is 1 cycle period and P dc is the dc power dissipation in the device. This simple approach to represent the effect of oscillatory feedback potential from an RF cavity is effective to give the first-order evaluation of Gunn diode performances [38].…”

Section: Device Structure and Power Estimationmentioning

confidence: 99%

Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

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The performances of GaN-based Gunn diodes have been studied extensively for more than two decades, however, the diverging electron drift velocity characteristics employed in these studies merit a review of the potential of GaN Gunn diodes as THz sources. A self-consistent analytical-band Monte Carlo (MC) model capable of reproducing the electron drift velocity characteristics of GaN predicted theoretically by the first-principles full band MC model is used in this work to evaluate systematically the performance of GaN Gunn diodes in transit time mode. The optimal fundamental frequency of a sustainable current oscillation under a DC bias is determined as a function of the length of its transit region. The MC model predicts a GaN Gunn diode with a transit length of 500 nm capable of operating at frequencies up to 625 GHz with an estimated output power of 3.0 W. An MC model takes into account the effect of defects in order to replicate the much lower electron drift velocity characteristics derived from experimental work and predicts THz signal generation of 2.5 W at highest sustainable operating frequency of 326 GHz in a Gunn diode with a transit length of 700 nm.

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Section: Device Structure and Power Estimationmentioning

confidence: 99%

Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

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“…Our MC model was used to allow the quantitative discussion of carrier heating effect which could not be accounted for by DD models in the previous study. The MC model has been successfully used to investigate the planar Gunn diodes and recently the PWB diode. The model incorporates the Г − L − X valleys of the conduction band and also include the effect of non‐parabolicity.…”

Section: The Monte Carlo Modelmentioning

confidence: 99%

Investigating the Role of Band Offset on the Property and Operation of the Potential Well Barrier Diodes

Akura

Dunn

2019

Physica Status Solidi (b)

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The impact of grading the GaAs/AlGaAs interface on carrier dynamics in a potential well barrier (PWB) diode has been explored and demonstrated in this paper. Three heterostructures in the GaAs/AlGaAs system namely GaAs/Al0.2Ga0.8As, GaAs/Al0.3Ga0.7As, and GaAs/Al0.4Ga0.6As with corresponding band offsets of 0.10, 0.25, and 0.30 eV, respectively, are investigated using the drift‐diffusion (DD) and Monte Carlo (MC) models. The behavior of the diodes with different band offsets are compared in terms of mean electron velocity, mean electron energy, and density of charge along the intrinsic regions and in the potential well. The MC simulation model enables the effects of space‐charge injection and carrier heating, which are not included in previous study of these structures, be treated quantitatively. Significant differences exist in the behavior of the three heterojunctions as this impacts the curvature coefficient and ideality factor of the diode. Both the ideality factor and curvature coefficient reflect the magnitude of band offset of the heterojunctions (interface).

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“…The Monte Carlo model used here was initially developed to study the transport formalism in semiconductor devices and has been used extensively to study operation of the Gunn diodes [16][17][18] . The carrier free flights duration between successive collisions and the scattering events involved are selected stochastically in accordance with the given transition probabilities describing the microscopic processes.…”

Section: The Monte Carlo Modelmentioning

confidence: 99%

Hot electron effects on the operation of potential well barrier diodes

Akura

Dunn

Missous³

2019

J. Semicond.

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A study has just been carried out on hot electron effects in GaAs/Al0.3Ga0.7As potential well barrier (PWB) diodes using both Monte Carlo (MC) and drift-diffusion (DD) models of charge transport. We show the operation and behaviour of the diode in terms of electric field, mean electron velocity and potential, mean energy of electrons and Γ-valley population. The MC model predicts lower currents flowing through the diode due to back scattering at anode (collector) and carrier heating at higher bias. At a bias of 1.0 V, the current density obtained from experimental result, MC and DD simulation models are 1.35, 1.12 and 1.77 μA/μm2 respectively. The reduction in current over conventional model, is compensated to a certain extent because less charge settles in the potential well and so the barrier is slightly reduced. The DD model results in higher currents under the same bias and conditions. However, at very low bias specifically, up to 0.3 V without any carrier heating effects, the DD and MC models look pretty similar as experimental results. The significant differences observed in the I–V characteristics of the DD and MC models at higher biases confirm the importance of energy transport when considering these devices.

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Monte Carlo modelling of multiple-transit-region Gunn diodes

Cited by 14 publications

References 12 publications

Monte Carlo evaluation of GaN THz Gunn diodes

Monte Carlo evaluation of GaN THz Gunn diodes

Investigating the Role of Band Offset on the Property and Operation of the Potential Well Barrier Diodes

Hot electron effects on the operation of potential well barrier diodes

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