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2004
DOI: 10.1088/0268-1242/19/7/018
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A novel hybrid IMPATT-Gunn device

Abstract: A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 µm diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.

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Cited by 1 publication
(1 citation statement)
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“…The integration of molecular biology and the physical sciences at micro-and nanoscales for constructing hybrid devices has undergone rapid development [1][2][3][4][5]. Important requirements for the construction of hybrid devices include (a) a suitable structure to act as a physical transducer for quantitative detection, (b) special biomaterials and molecules for converting chemical energy into mechanical energy, and (c) the implementation of interfacing technologies to combine the special biomaterials and molecules with the transducer.…”
Section: Introductionmentioning
confidence: 99%
“…The integration of molecular biology and the physical sciences at micro-and nanoscales for constructing hybrid devices has undergone rapid development [1][2][3][4][5]. Important requirements for the construction of hybrid devices include (a) a suitable structure to act as a physical transducer for quantitative detection, (b) special biomaterials and molecules for converting chemical energy into mechanical energy, and (c) the implementation of interfacing technologies to combine the special biomaterials and molecules with the transducer.…”
Section: Introductionmentioning
confidence: 99%