Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

Teoh, Yi-Hong; Dunn, G. M.; Priestley, N.; Carr, M.

doi:10.1088/0268-1242/20/5/016

Cited by 9 publications

(7 citation statements)

References 7 publications

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“…The 2.0-µm-grooved-anode diode operates at a frequency f of In order to calculate the electrical characteristics of the diode, we put a single-tone sinusoidal voltage of form V DC + V AC sin(2πft) across the diode instead of embedding it to a resonant circuit, as the external circuit adds complexity to the calculation and easily results in non-convergence. This method is very popular in the analysis of the RF performance of Gunn diodes [30][31][32][33][34][35][36][37] and its validity has been proved in previous publications [33][34][35][36][37]. The applied DC voltage V DC has to be above a critical value so that the device is biased in the negative differential mobility regime.…”

Section: Resultsmentioning

confidence: 99%

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

Wang

2020

Micromachines

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In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms. A well-designed grooved anode contact is adopted to separate the long-channel diode into two short-channel diodes in parallel. If the grooved anode contact is positioned in the middle of the device, the output power nearly doubles in the grooved-anode diode compared with the single-channel ones, as does the output frequency. Based on the numerical results, the best output characteristics are obtained at the 2.0-µm symmetrical grooved-anode diode, which produces nearly 5.48 mW of power at the fundamental frequency of 172.81 GHz, with 3.13% efficiency of power conversion. If the grooved anode contact is not positioned in the middle of the diode, the harmonic frequency would be enhanced. The GaN heterostructure grooved-anode Gunn diode has been demonstrated to be an excellent solid-state source of terahertz oscillator.

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Section: Resultsmentioning

confidence: 99%

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

Wang

2020

Micromachines

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“…Achieving higher output power and terahertz oscillation frequency are two crucial issues for the GaN planar Gunn diode to attain the final fulfillment of its commercialized application. However, as reported in [17][18][19], planar Gunn diodes generate smaller RF (Radio Frequency) power than the vertical structure. Moreover, the fundamental oscillation for the GaN Gunn diodes reported so far is still far from the terahertz regime.…”

Section: Introductionmentioning

confidence: 82%

Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode

Wang

Yang

et al. 2020

Applied Sciences

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In this paper, we propose a novel gallium nitride-based multi-two-dimensional-electron-gas (2DEG)-channel self-parallel Gunn diode (SPD) for the first time. In the SPD, a trench anode is etched through at least the bottommost 2DEG channels, which splits all 2DEG channels into two shorter channels with lengths of L1 and L2. Therefore, one SPD is just equal to several shorter diodes in parallel; as a result, we call it a self-parallel Gunn diode. In the symmetrical SPD, the component of fundamental frequency is nearly multiplied as compared with the regular Gunn diode. In the asymmetrical SPD (L2 = nL1, n is a positive integer), the harmonic components are greatly enhanced, specially the nth harmonic. Our work demonstrates that the GaN-based terahertz SPD not only offers an easy transfer between two different frequencies, but also realizes the simultaneous enhancement of oscillation power and frequency.

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“…The majority of the work that concentrated on modelling the diode itself, which typically used either a hydrodynamic based approach 24 or Monte Carlo simulation techniques 10,13,[25][26][27][28] , generally relies on estimated values for the parameters of an approximate equivalent oscillator circuit. These investigations centred on analysis of the behaviour and performance of the diode in isolation rather than in conjunction with an accurately modelled equivalent circuit: this is partly due to the difficulties in combining Monte Carlo simulation results with external circuit models due to the solution noise generated by the stochastic nature of the technique.…”

Section: Accounting For Interaction Between the Diode And Oscillator mentioning

confidence: 99%

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

et al. 2010

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Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (~0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described.

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Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

Cited by 9 publications

References 7 publications

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

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