Abstract:In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms. A well-designed grooved anode contact is adopted to separate the long-channel diode into two short-channel diodes in parallel. If the grooved anode contact is positioned in the middle of the device, the output power nearly doubles in the grooved-anode diode compared with the single-channel ones, as does the output frequency. Based on t… Show more
“…Nine of the papers, [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 ], explore various designs of wide bandgap high power devices. The remaining papers cover various applications based on wide bandgaps, such as ZnO Nanorods for High Photon Extraction Efficiency of GaN-Based Photonic Emitter [ 13 ], InGaZnO Thin-Film Transistors [ 14 ], Wide Band Gap WO 3 Thin Film [ 15 ], Silver Nanorings [ 16 , 17 ] and InGaN Laser Diode [ 18 , 19 , 20 ].…”
mentioning
confidence: 99%
“…Li et al [ 16 ] optimized silver nanoring for transparent flexible electrodes applied to wide bandgap devices. Y. Wang et al [ 17 ] proposed, for the first time, a novel GaN-based heterostructure Gunn diode, which turns out to be an excellent solid-state source for terahertz oscillators. W. Wang et al [ 18 ] carried out a theoretical investigation the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm.…”
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era [...]
“…Nine of the papers, [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 ], explore various designs of wide bandgap high power devices. The remaining papers cover various applications based on wide bandgaps, such as ZnO Nanorods for High Photon Extraction Efficiency of GaN-Based Photonic Emitter [ 13 ], InGaZnO Thin-Film Transistors [ 14 ], Wide Band Gap WO 3 Thin Film [ 15 ], Silver Nanorings [ 16 , 17 ] and InGaN Laser Diode [ 18 , 19 , 20 ].…”
mentioning
confidence: 99%
“…Li et al [ 16 ] optimized silver nanoring for transparent flexible electrodes applied to wide bandgap devices. Y. Wang et al [ 17 ] proposed, for the first time, a novel GaN-based heterostructure Gunn diode, which turns out to be an excellent solid-state source for terahertz oscillators. W. Wang et al [ 18 ] carried out a theoretical investigation the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm.…”
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era [...]
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