This paper presents a simple method for accurately calculating quantum mechanical transmission probability and current across arbitrary potential barriers by using the multistep potential approximation. This method is applicable to various potential barriers and wells, including continuous variations of potential energy and electron effective mass. Various potential barrier structures and a hot-electron transistor are analyzed to show the feasibility of this method.

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The tribological properties of cast iron have been investigated to determine the effects of micro-texturing the surfaces. The micro-textured surfaces were prepared by shot blasting or milling using a shaper. The surfaces with groove patterns and mesh patterns had higher friction coefficients than the flat surfaces. The surfaces with dimpled patterns had lower friction coefficients than the flat surfaces. The results indicated that the dimpled pattern had a beneficial effect by decreasing the friction.

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In this study, we investigated the effects of postmetallization annealing (PMA) on the interface properties of GaN metal-oxide-semiconductor (MOS) structures using Al 2 O 3 prepared by atomic layer deposition. Excellent capacitance-voltage (C-V ) characteristics without frequency dispersion were observed in the MOS sample after PMA in N 2 ambient at 300-400 °C. The PMA sample showed state densities of only at most 4 ' 10 10 cm %1 eV %1 . A geometric phase analysis of transmission electron microscopy images after PMA revealed a uniform distribution of the lattice constant near the Al 2 O 3 /GaN interface, leading to the improved bond termination and bonding order configuration along the interface.

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