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A single-pixel camera can be represented using complex-amplitude. The complex-amplitude representation of input signals and output signals enables us to perform complex-amplitude imaging of an object, particularly profilometry with reflectance measurements or quantitative phase imaging with transmittance measurements. The complex-amplitude representation of optical coding masks and the coherent addition that is performed by interference can directly represent Hadamard patterns having positive and negative values. Furthermore, the residual area of the mask can be used for a reference beam with phase shifting. Such a complex-amplitude imaging system with a single-beam line structure is highly stabile against external disturbances.

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High output power and low intermodulation distortion (IMD) GaN-FET amplifiers are highly sought after for W-CDMA base stations. In order to obtain high output power, we have developed a field-modulating plate GaN-FET with a high maximum drain current and a high gate-to-drain breakdown voltage. Also, in order to suppress the memory effects that obstruct digital predistortion (DPD) linearization in W-CDMA power amplifiers, we have newly developed the bias network, in which frequency-dependent impedance at the base band of multicarrier W-CDMA signals is reduced. As a result, the GaN-FET amplifier developed for W-CDMA base stations achieves a record 370-W W-CDMA peak output power, and a low DPD linearized IMD of less than -50 dBc at the highest W-CDMA average output power of over 60 W, resulting in a significant improvement of DPD linearization not only in IM3 but also in IM5 and IM7.

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