Calculation of transmission tunneling current across arbitrary potential barriers

Ando, Yasuhisa; Itoh, Tomohiro

doi:10.1063/1.338082

Cited by 473 publications

(176 citation statements)

References 16 publications

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“…Normally, at the transition from single subband occupancy to double subband occupancy, there occurs a drop in mobility due to additional intersubband effects. 10,18,22 On the contrary, from Fig. 2 it is interesting to note that there is rise in µ ad .…”

Section: Resultsmentioning

confidence: 70%

“…The Hartree potential is obtained from the Poisson's equation by using a variational approach. 11,15,21 We use multistep potential approximation to calculate the transmission coefficient across the potential V (z) from which E n and ψ n (z) can be obtained as a function of F. 11,15,22 A diagram illustrating the effect of the external electric field F on the potential structure, subband energy levels and wave functions of a single side barrier delta doped double quantum well structure is presented in Fig. 1.…”

Section: Theorymentioning

confidence: 99%

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Oscillation of electron mobility in parabolic double quantum well structure due to applied electric field

Sahoo

Sahu

2014

AIP Advances

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We show that oscillation of low temperature electron mobility μ can be obtained by applying an electric field F along the growth direction of the asymmetrically barrier delta doped AlxGa1-xAs parabolic double quantum well structure. The drastic changes in the subband Fermi energies and distributions of subband wave functions as a function of F yield nonmonotonic intra- and intersubband scattering rate matrix elements mediated by intersubband effects. The oscillatory enhancement of μ, which is attributed to the subband mobilities governed by the ionized impurity scattering, magnifies with increase in well width and decrease in height of the parabolic structure potential. The results can be utilized for nanoscale low temperature device applications.

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Section: Resultsmentioning

confidence: 70%

Section: Theorymentioning

confidence: 99%

Oscillation of electron mobility in parabolic double quantum well structure due to applied electric field

Sahoo

Sahu

2014

AIP Advances

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“…We also incorporate the conduction band discontinuity at the interfaces. We obtain an analytical expression for the potential profile as a function of the electric field and calculate the transmission coefficient through the potential profile by adopting the multistep potential approximation 25 to numerically calculate the bound subband energy levels E i , wave functions i and subband electron density n i .…”

Section: Theorymentioning

confidence: 99%

Effect of electric field on low temperature multisubband electron mobility in a coupled Ga0.5In0.5P/GaAs quantum well structure

Sahu

Shore

2010

Journal of Applied Physics

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The effect of uniform electric field on low temperature ͑T=0 K͒ multisubband electron mobility i is analyzed by considering a barrier delta-doped Ga 0.5 In 0.5 P / GaAs coupled double quantum well structure. We consider ionized impurity scattering and interface roughness ͑IR͒ scattering. The screening of the scattering potentials is obtained by adopting the random phase approximation. Starting with a double-subband occupied system we have studied the changes in the intrasubband and intersubband scattering processes by varying the electric field F and highlight the influence of F on the intersubband effects which yields interesting results on i . At a certain electric field, the system undergoes a transition from double subband to single subband occupancy leading to a large enhancement in mobility due to the suppression of the intersubband interactions. We show that by reversing the electric field a large change in mobility is obtained due to the asymmetric nature of the IR scattering potential. It is also gratifying to show that by varying the electric field the relative dominance of different scattering mechanisms on subband mobility changes through the intersubband interaction.

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“…Thus, the barrier in the depletion region, which is typically of a wide spatial dimension, but of low energy, has a significant current-impeding effect. The current-voltage curve for a single AlN barrier with GaN leads is calculated using a transmission coefficient obtained with a transfer-matrix method for arbitrary barrier shapes 37 profile U (x) is obtained in an effective-mass Schrödinger-Poisson description. 16 A stepped Fermi level induces the nonequilibrium charge-density distribution.…”

Section: B Tunneling Barriermentioning

confidence: 99%

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

2011

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Inversion and depletion regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets up a barrier that may seriously impede perpendicular electronic transport. This may ruin the performance of devices such as quantum-cascade lasers and resonant-tunneling diodes. Here we introduce the concepts of polarization balance and polarization-balanced designs: A structure is polarization balanced when the applied bias match the voltage drop arising from spontaneous and piezeolectric fields. Devices designed to operate at this bias have polarization-balanced designs. These concepts offer a systematic approach to avoid the formation of depletion regions. As a test case, we consider the design of AlN/GaN double-barrier structures with AlxGa 1−x N leads. To guide our efforts, we derive a simple relation between the intrinsic voltage drop arising from polar effects, average alloy composition of the active region, and the alloy concentration of the leads. Polarization-balanced designs secure good filling of the ground state for unbiased structures, while for biased structures with efficient emptying of the active region they remove the depletion barriers.

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Calculation of transmission tunneling current across arbitrary potential barriers

Cited by 473 publications

References 16 publications

Oscillation of electron mobility in parabolic double quantum well structure due to applied electric field

Oscillation of electron mobility in parabolic double quantum well structure due to applied electric field

Effect of electric field on low temperature multisubband electron mobility in a coupled Ga0.5In0.5P/GaAs quantum well structure

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

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